Advanced Semiconductor Devices - Proceedings Of The 2006 Lester Eastman Conference

by Paul Maki (Editor), Michael S Shur (Editor), James Kolodzey (Editor)

Overview

This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.

Product Details

ISBN-13:	9789812708588
Publisher:	World Scientific Publishing Company, Incorporated
Publication date:	06/28/2007
Series:	Selected Topics In Electronics And Systems , #45
Pages:	208
Product dimensions:	6.60(w) x 9.80(h) x 0.80(d)

Table of Contents

Preface     v
Wide Band Gap Devices
Wide-Bandgap Semiconductor Devices for Automotive Applications   M. Sugimoto   H. Ueda   T. Uesugi   T. Kachi     3
A GaN on SiC HFET Device Technology for Wireless Infrastructure Applications   B. Green   H. Henry   K. Moore   J. Abdou   R. Lawrence   F. Clayton   M. Miller   J. Crowder   E. Mares   O. Hartin   C. Liu   C. Weitzel     11
Drift Velocity Limitation in GaN HEMT Channels   A. Matulionis     15
Simulations of Field-Plated and Recessed Gate Gallium Nitride-Based Heterojunction Field-Effect Transistors   V. O. Turin   M. S. Shur   D. B. Veksler     19
Low Temperature Electroluminescence of Green and Deep Green GaInN/GaN Light Emitting Diodes   Y. Li   W. Zhao   Y. Xia   M. Zhu   J. Senawiratne   T. Detechprohm   C. Wetzel     25
Spatial Spectral Analysis in High Brightness GaInN/GaN Light Emitting Diodes   T. Detchprohm   Y. Xia   J. Senawiratne   Y. Li   M. Zhu   W. Zhao   Y. Xi   E. F. Schubert   C. Wetzel     29
Self-Induced Surface Texturing of Al[subscript 2]O[subscript 3] by Means of Inductively Coupled Plasma Reactive Ion Etching in Cl[subscript 2] Chemistry   P. Batoni   E. B. Stokes   T. K. Shah   M. D. Hodge   T. J. Suleski     35
Field and Thermionic Field Transport in Aluminium Gallium Arsenide Heterojunction Barriers   D. V. Morgan   A. Porch     39
Electrical Characteristics and Carrier Lifetime Measurements in High Voltage 4H-SiC PiN Diodes   P. A. Losee   C. Li   R. J. Kumar   T. P. Chow   I. B. Bhat   R. J. Gutmann     43
Geometry and Short Channel Effects on Enhancement-Mode n-Channel GaN MOSFETs on p and n[superscript -] GaN/Sapphire Substrates   W. Huang   T. Khan   T. P. Chow     49
4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs   Y. Wang   P. A. Losee   T. P. Chow     55
Present Status and Future Directions of SiGe HBT Technology   M. H. Khater   T. N. Adam   R. Krishnasamy   M. E. Dahlstrom   J.-S. Rieh   K. T. Schonenberg   B. A. Orner   F. Pagette   K. Stein   D. C. Ahlgren     61
Optical Properties of GaInN/GaN Multi-Quantum Well Structure and Light Emitting Diode Grown by Metalorganic Chemical Vapor Phase Epitaxy   J. Senawiratne   M. Zhu   W. Zhao   Y. Xia   Y. Li   T. Detchprohm   C. Wetzel     81
Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer   Y. Sun   L. F. Eastman     85
Above 2 A/mm Drain Current Density of GaN HEMTs Grown on Sapphire   F. Medjdoub   J.-F. Carlin   M. Gonschorek   E. Feltin   M. A. Py   N. Grandjean   E. Kohn     91
Focused Thermal Beam Direct Patterning on InGaN during Molecular Beam Epitaxy   X. Chen   W. J. Schaff   L. F. Eastman     97
Terahertz and Millimeter Wave Devices
Temperature-Dependent Microwave Performance of Sb-Heterostructure Backward Diodes for Millimeter-Wave Detection   N. Su   Z. Zhang   P. Fay   H. P. Moyer   R. D. Rajavel   J. Schulman     105
A Mixed-Signal Row/Column Architecture for Very Large Monolithic mm-Wave Phased Arrays   C. Carta   M. Seo   M. Rodwell     111
Terahertz Emission from Electrically Pumped Silicon Germanium Intersubband Devices   N. Sustersic   S. Kim   P.-C. Lv   M. Coppinger    T. Troeger   J. Kolodzey     115
Terahertz Sensing of Materials   G. Xuan   S. Ghosh   S. Kim   P-C. Lv   T. Buma   B. Weng   K. Barner   J. Kolodzey     121
Silicon and SiGe Devices
Negative Bias Temperature Instability in TiN/HF-Silicate Based Gate Stacks   N. A. Chowdhury   D. Misra   N. Rahim     129
Power Adaptive Control of Dense Configured Super-Self-Aligned Back-Gate Planar Transistors   H. Lin   H. Liu   A. Kumar   U. Avci   J. S. Van Delden   S. Tiwari     143
Non-Volatile High Speed & Low Power Charge Trapping Devices   M. K. Kim   S. Tiwari     147
High Performance SiGeC/Si Near-IR Electrooptic Modulators and Photodetectors   M. Schubert   F. Rana     153
Nanoelectronics and Ballistic Devices
Hybrid Nanomaterials for Multi-Spectral Infrared Photodetection   A. D. Stiff-Roberts     165
Ballistic Electron Acceleration Negative-Differential-Conductivity Devices   B. Aslan   L. F. Eastman   W. J. Schaff   X. Chen   M. G. Spencer   H.-Y. Cha   A. Dyson   B. K. Ridley     173
Photoluminescence and Photocapacitance
Understanding Ultraviolet Emitter Performance Using Intensity Dependent Time-Resolved Photoluminescence   M. Wraback   G. A. Garrett   A. V. Sampath   P. H. Shen     179
Photocapacitance of Selectively Doped AlGaAs/GaAs Heterostructures Containing Deep Traps   N. B. Gorev   I. F. Kodzhespirova   E. N. Privalov   N. Khuchua   L. Khvedelidze   M. S. Shur     189
Author Index