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| Preface | ||
| Materials Research Society Symposium Proceedings | ||
| Numerical Studies of the Dynamics of Silicon: Relaxation, Nucleation and Energy Landscape | 3 | |
| Atomistic Character of Nanocrystalline and Mixed Phase Silicon | 15 | |
| Kinetics of Light-Induced Effects in Mixed-Phase Hydrogenated Silicon Solar Cells | 21 | |
| Temperature Dependence of a Hydrogen Doublet Site in Light-Soaked a-Si:h From [superscript 1]H NMR | 27 | |
| Evidence for Trap-Conversion Induced Instability in Amorphous Silicon | 33 | |
| Evolution of Charged Gap States in a-Si:H Under Light Exposure | 39 | |
| Metamiet Transformation of Silica | 45 | |
| Metastable Defects in the Amorphous Silicon-Germanium Alloys | 51 | |
| Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon | 63 | |
| Electron-Spin-Resonance Investigation of Laser Crystallized Polycrystalline Silicon | 69 | |
| Time-Resolved Switching Studies in a-Si:H and Related Films | 75 | |
| Adsorption and Oxidation Effects in Microcrystalline Silicon | 81 | |
| Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas | 87 | |
| Origin of the Low-Energy Photoluminescence in Microcrystalline Silicon Films | 93 | |
| Post-Transit Analysis of Transient Photocurrents From High-Deposition-Rate a-Si:H Samples | 99 | |
| Size Distribution of Embedded Nano-Crystallites in Polymorphous Silicon Studied by Raman Spectroscopy and Photoluminescence | 105 | |
| Thin Film Cavity Ringdown Spectroscopy and Second Harmonic Generation on Thin a-Si:H Films | 111 | |
| High Frequency Electron Spin Resonance Study of Hydrogenated Microcrystalline Silicon | 117 | |
| Photoelectron Spectroscopic Investigations of Very Thin a-Si:H Layers | 125 | |
| Determination of Defect Densities by Constant Photocurrent Method - Comparison of AC and DC Methods | 131 | |
| Depth Profiling of Light-Induced Defects in Hydrogenated Amorphous Silicon by Transient Photocurrent Spectroscopy | 137 | |
| A Study of Electronic Defects in Hydrogenated Amorphous Silicon Prepared by the Expanding Thermal Plasma Technique | 143 | |
| Performance of Thin-Film Silicon MEMS Resonators in Vacuum | 151 | |
| Area-Dependent Switching in Thin-Film Silicon Devices | 157 | |
| Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-CVD | 163 | |
| High-Rate (>1nm/s) and Low-Temperature (<400[degree]C) Deposition of Silicon Nitride Using an N[subscript 2]/SiH[subscript 4] and NH[subscript 3]/SiH[subscript 4] Expanding Thermal Plasma | 169 | |
| Switch-On Transients and Static Characteristics of Polymorphous and Amorphous Silicon Thin-Film Transistor | 175 | |
| Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors After Plasma Passivation | 181 | |
| Above-Threshold Parameter Extraction Including Contact Resistance Effects for a-Si:H TFTs on Glass and Plastic | 187 | |
| Mechanical Stress and Process Integration of Direct X-ray Detector and TFT in a-Si:H Technology | 193 | |
| Stacked n-i-p-n-i-p Heterojunctions for Image Recognition | 199 | |
| Development of Vertically Integrated Imaging and Particle Sensors | ||
| An Amorphous Silicon Photoconductor for UV Detection | 211 | |
| Correlation Between the Tunneling Oxide and I-V Curves of MIS Photodiodes | 217 | |
| Numerical Simulation of the Influence of the Gap State of a-Si:H on the Characteristics of a-Si:H p-i-n/OLED Coupling Device | ||
| Low-Temperature Growth of Poly-Si and SiGe Thin Films by Reactive Thermal CVD and Fabrication of High Mobility TFTs Over 50 cm[superscript 2]/Vs | 229 | |
| Improvement of Gate Oxide Integrity in Low Temperature Poly Silicon TFT | 241 | |
| Threshold Voltage Performance of a-Si:H TFTs for Analog Applications | 247 | |
| Characteristics of Bottom Gate Thin Film Transistors With Silicon Rich Poly-Si[subscript 1-x]Ge[subscript x] and Poly-Si Fabricated by Reactive Thermal Chemical Vapor Deposition | 253 | |
| Optoelectronic Detection of DNA Molecules Using an Amorphous Silicon Photodetector | 259 | |
| Fabrication of Novel TFT LCD Panels With Hig Aperture Ratio Using a-SiCO:H Films as a Passivation Layer | 265 | |
| Leakage Current Behavior In Common i-Layer a-Si:H p-i-n Photodiode Arrays | 271 | |
| Enhanced Blue Sensitivity in ITO/a-SiN[subscript x]:H/a-Si:H MIS Photodetectors | 277 | |
| Amorphous and Microcrystalline Silicon Based Solar Cells and Modules on Textured Zinc Oxide Coated Glass Substrates | 285 | |
| Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells | 297 | |
| Carrier Transport and Recombination in a-Si:H p-i-n Solar Cells in Dark and Under Illumination | 303 | |
| Hydrogenated Microcrystalline Silicon Single-Junction and Multi-Junction Solar Cells | 309 | |
| Electronic Properties of Microcrystalline Silicon Investigated by Photoluminescence Spectroscopy on Films and Devices | 321 | |
| Localized Stress in Microcrystalline Silicon Photovoltaic Structures Studied by Post-Transit Time-of-Flight Spectroscopy | 327 | |
| Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys | 333 | |
| Micro-Raman Studies of Mixed-Phase Hydrogenated Silicon Solar Cells | 339 | |
| Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon | 345 | |
| Recombination in n-i-p (Substrate) a-Si:H Solar Cells With Silicon Carbide and Protocrystalline p-Layers | 351 | |
| Nanocrystalline Silicon (ne-Si) From Single Ion Beam Sputtering | 357 | |
| Correlation of Material Properties and Open-Circuit Voltage of Amorphous Silicon Based Solar Cells | 363 | |
| Simulations of Buffer Layers in a-Si:H Thin Film Solar Cells Deposited With an Expanding Thermal Plasma | 369 | |
| Microcrystalline (Si, Ge):H Solar Cells | 375 | |
| Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon p-i-n Diodes | 381 | |
| Deposition of Device Quality [mu]c-Si Films and Solar Cells at High Rates by HWCVD in a W Filament Regime Where W/Si Formation is Minimal | 387 | |
| Room Temperature Recovery of Light Induced Changes in Amorphous Silicon Solar Cells | 393 | |
| Toward Understanding the Degradation Without Light Soaking in Hot-Wire a-Si:H Thin Films and Solar Cells | 399 | |
| Material Aspects of Reactively MF-Sputtered Zinc Oxide for TCO Application in Silicon Thin-Film Solar Cells | 405 | |
| Combinatorial Approach to Thin-Film Silicon Materials and Devices | 413 | |
| Calculations of SiH[subscript 3] Diffusion and Growth Processes on a-Si:H Surfaces | 425 | |
| The a-Si:H Growth Mechanism: Temperature Study of the SiH[subscript 3] Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth | 431 | |
| Effects of Excitation Frequency and H[subscript 2] Dilution on Cluster Generation in Silance High-Frequency Discharges | 437 | |
| Application of Deposition Phase Diagrams for the Optimization of a-Si:H-Based Materials and Solar Cells | ||
| Influence of Filament and Substrate Temperatures on Structural and Optoelectronic Properties of Narrow Gap a-SiGe:H Alloys Deposited by Hot-Wire CVD | 455 | |
| On the Role of Surface Diffusion and Its Relation to the Hydrogen Incorporation During Hydrogenated Amorphous Silicon Growth | 461 | |
| Effect of Temperature and Temperature Uniformity on Plasma and Device Stability | 467 | |
| Hydrosilylation of Silicon Surfaces: Crystalline Versus Amorphous | 473 | |
| Present Status of Hot Wire Chemical Vapor Deposition Technology | 479 | |
| Properties of High Quality p-Type Micro-Crystalline-Si Prepared by Cat-CVD | 491 | |
| Investigations on the Real-Time Monitoring of the Crystallinity of Hydrogenated Microcrystalline Silicon Films | 497 | |
| Towards Microcrystalline Silicon n-i-p Solar Cells With 10% Conversion Efficiency | 503 |
Overview