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Amorphous and Nanocrystalline Silicon-Based Films 2003: Volume 762


Amorphous silicon technology has been the subject of symposia every year since 1984. This remarkable longevity is due to the continuous emergence of new scientific questions and new technological challenges for silicon thin films. Earlier there was a strong emphasis on methods to achieve high deposition rates using plasma or hot-wire chemical vapor deposition, and on the properties and applications of nanocrystalline silicon films, which for example have been incorporated into stacked a-Si:H/nc-Si:H solar cells. ...

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Warrendale, Pennsylvania, U.S.A. 2003 Hard Cover Good/No Jacket 1558996990 Ex-Library Usual ex-library features. The interior is clean and tight. Binding is good. Cover shows ... slight wear. 794 pages. Read more Show Less

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Amorphous silicon technology has been the subject of symposia every year since 1984. This remarkable longevity is due to the continuous emergence of new scientific questions and new technological challenges for silicon thin films. Earlier there was a strong emphasis on methods to achieve high deposition rates using plasma or hot-wire chemical vapor deposition, and on the properties and applications of nanocrystalline silicon films, which for example have been incorporated into stacked a-Si:H/nc-Si:H solar cells. The papers appearing in this book are sorted under six chapter headings on the basis of subject matter. Chapter I is concerned with amorphous network structures, electronic metastability, defects, and photoluminescence. Chapter II focuses on thin-film transistors and imager arrays. Chapter III covers solar cells. Chapter IV addresses growth mechanisms, hot-filament CVD, and nc-Si:H growth. Chapter V contains all remaining topics in film growth, especially those related to devices. Finally, Chapter VI focuses on crystallized film.

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Product Details

  • ISBN-13: 9781558996991
  • Publisher: Materials Research Society
  • Publication date: 11/12/2003
  • Series: MRS Proceedings Series , #762
  • Pages: 794
  • Product dimensions: 6.40 (w) x 9.30 (h) x 1.90 (d)

Table of Contents

Materials Research Society Symposium Proceedings
Numerical Studies of the Dynamics of Silicon: Relaxation, Nucleation and Energy Landscape 3
Atomistic Character of Nanocrystalline and Mixed Phase Silicon 15
Kinetics of Light-Induced Effects in Mixed-Phase Hydrogenated Silicon Solar Cells 21
Temperature Dependence of a Hydrogen Doublet Site in Light-Soaked a-Si:h From [superscript 1]H NMR 27
Evidence for Trap-Conversion Induced Instability in Amorphous Silicon 33
Evolution of Charged Gap States in a-Si:H Under Light Exposure 39
Metamiet Transformation of Silica 45
Metastable Defects in the Amorphous Silicon-Germanium Alloys 51
Temperature Dependence of the Decay of Optically Excited Charge Carriers in Amorphous Silicon 63
Electron-Spin-Resonance Investigation of Laser Crystallized Polycrystalline Silicon 69
Time-Resolved Switching Studies in a-Si:H and Related Films 75
Adsorption and Oxidation Effects in Microcrystalline Silicon 81
Silicon Nanostructured Films Formed by Pulsed-Laser Deposition in Inert Gas and Reactive Gas 87
Origin of the Low-Energy Photoluminescence in Microcrystalline Silicon Films 93
Post-Transit Analysis of Transient Photocurrents From High-Deposition-Rate a-Si:H Samples 99
Size Distribution of Embedded Nano-Crystallites in Polymorphous Silicon Studied by Raman Spectroscopy and Photoluminescence 105
Thin Film Cavity Ringdown Spectroscopy and Second Harmonic Generation on Thin a-Si:H Films 111
High Frequency Electron Spin Resonance Study of Hydrogenated Microcrystalline Silicon 117
Photoelectron Spectroscopic Investigations of Very Thin a-Si:H Layers 125
Determination of Defect Densities by Constant Photocurrent Method - Comparison of AC and DC Methods 131
Depth Profiling of Light-Induced Defects in Hydrogenated Amorphous Silicon by Transient Photocurrent Spectroscopy 137
A Study of Electronic Defects in Hydrogenated Amorphous Silicon Prepared by the Expanding Thermal Plasma Technique 143
Performance of Thin-Film Silicon MEMS Resonators in Vacuum 151
Area-Dependent Switching in Thin-Film Silicon Devices 157
Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-CVD 163
High-Rate (>1nm/s) and Low-Temperature (<400[degree]C) Deposition of Silicon Nitride Using an N[subscript 2]/SiH[subscript 4] and NH[subscript 3]/SiH[subscript 4] Expanding Thermal Plasma 169
Switch-On Transients and Static Characteristics of Polymorphous and Amorphous Silicon Thin-Film Transistor 175
Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors After Plasma Passivation 181
Above-Threshold Parameter Extraction Including Contact Resistance Effects for a-Si:H TFTs on Glass and Plastic 187
Mechanical Stress and Process Integration of Direct X-ray Detector and TFT in a-Si:H Technology 193
Stacked n-i-p-n-i-p Heterojunctions for Image Recognition 199
Development of Vertically Integrated Imaging and Particle Sensors
An Amorphous Silicon Photoconductor for UV Detection 211
Correlation Between the Tunneling Oxide and I-V Curves of MIS Photodiodes 217
Numerical Simulation of the Influence of the Gap State of a-Si:H on the Characteristics of a-Si:H p-i-n/OLED Coupling Device
Low-Temperature Growth of Poly-Si and SiGe Thin Films by Reactive Thermal CVD and Fabrication of High Mobility TFTs Over 50 cm[superscript 2]/Vs 229
Improvement of Gate Oxide Integrity in Low Temperature Poly Silicon TFT 241
Threshold Voltage Performance of a-Si:H TFTs for Analog Applications 247
Characteristics of Bottom Gate Thin Film Transistors With Silicon Rich Poly-Si[subscript 1-x]Ge[subscript x] and Poly-Si Fabricated by Reactive Thermal Chemical Vapor Deposition 253
Optoelectronic Detection of DNA Molecules Using an Amorphous Silicon Photodetector 259
Fabrication of Novel TFT LCD Panels With Hig Aperture Ratio Using a-SiCO:H Films as a Passivation Layer 265
Leakage Current Behavior In Common i-Layer a-Si:H p-i-n Photodiode Arrays 271
Enhanced Blue Sensitivity in ITO/a-SiN[subscript x]:H/a-Si:H MIS Photodetectors 277
Amorphous and Microcrystalline Silicon Based Solar Cells and Modules on Textured Zinc Oxide Coated Glass Substrates 285
Bandtail Limits to Solar Conversion Efficiencies in Amorphous Silicon Solar Cells 297
Carrier Transport and Recombination in a-Si:H p-i-n Solar Cells in Dark and Under Illumination 303
Hydrogenated Microcrystalline Silicon Single-Junction and Multi-Junction Solar Cells 309
Electronic Properties of Microcrystalline Silicon Investigated by Photoluminescence Spectroscopy on Films and Devices 321
Localized Stress in Microcrystalline Silicon Photovoltaic Structures Studied by Post-Transit Time-of-Flight Spectroscopy 327
Femtosecond Far-Infrared Studies of Carrier Dynamics in Hydrogenated Amorphous Silicon and Silicon-Germanium Alloys 333
Micro-Raman Studies of Mixed-Phase Hydrogenated Silicon Solar Cells 339
Hole Drift-Mobility Measurements in Contemporary Amorphous Silicon 345
Recombination in n-i-p (Substrate) a-Si:H Solar Cells With Silicon Carbide and Protocrystalline p-Layers 351
Nanocrystalline Silicon (ne-Si) From Single Ion Beam Sputtering 357
Correlation of Material Properties and Open-Circuit Voltage of Amorphous Silicon Based Solar Cells 363
Simulations of Buffer Layers in a-Si:H Thin Film Solar Cells Deposited With an Expanding Thermal Plasma 369
Microcrystalline (Si, Ge):H Solar Cells 375
Investigation of the Causes and Variation of Leakage Currents in Amorphous Silicon p-i-n Diodes 381
Deposition of Device Quality [mu]c-Si Films and Solar Cells at High Rates by HWCVD in a W Filament Regime Where W/Si Formation is Minimal 387
Room Temperature Recovery of Light Induced Changes in Amorphous Silicon Solar Cells 393
Toward Understanding the Degradation Without Light Soaking in Hot-Wire a-Si:H Thin Films and Solar Cells 399
Material Aspects of Reactively MF-Sputtered Zinc Oxide for TCO Application in Silicon Thin-Film Solar Cells 405
Combinatorial Approach to Thin-Film Silicon Materials and Devices 413
Calculations of SiH[subscript 3] Diffusion and Growth Processes on a-Si:H Surfaces 425
The a-Si:H Growth Mechanism: Temperature Study of the SiH[subscript 3] Surface Reactivity and the Surface Silicon Hydride Composition During Film Growth 431
Effects of Excitation Frequency and H[subscript 2] Dilution on Cluster Generation in Silance High-Frequency Discharges 437
Application of Deposition Phase Diagrams for the Optimization of a-Si:H-Based Materials and Solar Cells
Influence of Filament and Substrate Temperatures on Structural and Optoelectronic Properties of Narrow Gap a-SiGe:H Alloys Deposited by Hot-Wire CVD 455
On the Role of Surface Diffusion and Its Relation to the Hydrogen Incorporation During Hydrogenated Amorphous Silicon Growth 461
Effect of Temperature and Temperature Uniformity on Plasma and Device Stability 467
Hydrosilylation of Silicon Surfaces: Crystalline Versus Amorphous 473
Present Status of Hot Wire Chemical Vapor Deposition Technology 479
Properties of High Quality p-Type Micro-Crystalline-Si Prepared by Cat-CVD 491
Investigations on the Real-Time Monitoring of the Crystallinity of Hydrogenated Microcrystalline Silicon Films 497
Towards Microcrystalline Silicon n-i-p Solar Cells With 10% Conversion Efficiency 503
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