Amorphous and Nanocrystalline Silicon Science and Technology 2004, Volume 808

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This book celebrates 20 years of MRS symposia on the topic of amorphous silicon. Contributors showed that the simplified theories developed to explain the limited experimental information available in the early eighties have spurred more sophisticated experimentation - either refining the early understanding or making it irrelevant. The differences of opinion that continue to exist and emerge are probably the hallmark of the amazing vitality of this field. Applications range from 'mature' thin-film transistors, ...
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Overview

This book celebrates 20 years of MRS symposia on the topic of amorphous silicon. Contributors showed that the simplified theories developed to explain the limited experimental information available in the early eighties have spurred more sophisticated experimentation - either refining the early understanding or making it irrelevant. The differences of opinion that continue to exist and emerge are probably the hallmark of the amazing vitality of this field. Applications range from 'mature' thin-film transistors, solar cells and image sensors, to the 'emerging' possibility of erbium-doped nanocrystalline silicon-based materials for lasers and amorphous silicon quantum dots for luminescent devices. The book discusses material characterization, growth processes and devices. Each chapter is further subdivided into sections that group papers around common themes. Topics include: nanomaterials; electronic structure; metastable effects; understanding of growth processes; laser-induced crystallization; metal-induced crystallization; other growth techniques; newer devices; solar cells and thin-film transistors.
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Product Details

  • ISBN-13: 9781558997585
  • Publisher: Materials Research Society
  • Publication date: 9/3/2004
  • Series: MRS Proceedings Series , #808
  • Pages: 735

Table of Contents

Si wire light emission changes during Si/SiO[subscript x] interface formation 5
Fabrication and characterization of a germanium quantum-dot transistor formed by selective oxidation of SiGe/Si-on-insulator 11
Understanding the structure of Si nanoclusters in a/nc-Si:H films using spherical aberration-corrected transmission electron microscopy 17
Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals 23
About the luminescence mechanisms of composite a-Si:nc-Si system obtained by ion-beam amorphization in the wide dose region 29
Buffer-layer effect on mixed-phase cells studied by micro-Raman and photoluminescence spectroscopy 35
Metastability in undoped microcrystalline silicon thin films deposited by HWCVD 41
The influence of light-soaking and atmospheric adsorption on microcrystalline silicon films studied by coplanar transient photoconductivity 47
Identification of possible bonding sites for post deposition oxygen absorption in microcrystalline silicon 53
Correlation of hydrogenated nanocrystalline silicon microstructure and solar cell performance 59
H evolution from nano-crystalline silicon - comparison of simulation and experiment 65
Hydrogen in silicon and germanium : impurity activation and dopant passivation 73
Influence of the distribution of tail states in a-Si:H on the field dependence of carrier drift mobilities 85
Femtosecond far-infrared studies of photoconductivity in a-Si:H and a-SiGe:H 97
Extension of the constant photocurrent method to determine densities of occupied and unoccupied localized states 103
Hole drift-mobility measurements and multiple-trapping in microcrystalline silicon 109
Electronic properties of RF glow discharge intrinsic microcrystalline silicon near the amorphous silicon phase boundary 115
Transient and modulated photoconductivity in microcrystalline silicon 121
Interpretation of transient photocurrents in coplanar and sandwich PIN microcrystalline silicon structures 127
Electric-field dependence of photocarrier properties in the steady-state photocarrier grating experiment 133
Metastable defects in a-Si:H and a-Ge:H: the role of hydrogen 141
Evolution of D[superscript 0] and Non-D[superscript 0] light induced defect states in a-Si:H materials and their respective contribution to carrier recombination 153
Tritium induced defects in amorphous silicon 159
Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC 165
Reversible ordering of a-Si[subscript 1-x]Ge[subscript x] by the combined effect of light and temperature 171
Absence of enhanced stability in deuterated amorphous silicon thin film transistors 177
Are the current models helpful to understanding Staebler-Wronski degradation? 183
The role of charged gap states in light-induced degradation of single-junction a-Si:H solar cells 189
Surface processes during growth of hydrogenated amorphous silicon 199
In situ observation of silicon epitaxy breakdown with real-time spectroscopic ellipsometry 209
Comparison of phase diagrams for vhf and rf plasma-enhanced chemical vapor deposition of Si:H films 215
Phase diagram and microstructure of microcrystalline and amorphous silicon : a numerical growth simulation 221
A phase diagram for morphology and properties of low temperature deposited polycrystalline silicon grown by hot-wire chemical vapor deposition 227
Roughness evolution of high-rate deposited a-SiN[subscript x]:H films studied by atomic force microscopy and real time spectroscopic ellipsometry 233
Materials and interface optimization of heterojunction silicon (HIT) solar cells using in situ real-time spectroscopic ellipsometry 239
Enhanced surface diffusion in low-temperature a-Si:H processing 245
Effects of facet growth and nucleation on microcrystalline silicon by numerical model 251
New ultrahigh vacuum setup and advanced diagnostic techniques for studying a-Si:H film growth by radical beams 257
Excimer-laser growth of Si large-grain arrays 265
Location control of crystal grains in excimer laser crystallization of silicon thin films for single-grain TFTs 277
Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator 283
Silicon-hydrogen bonds in boron and phosphorous doped polycrystalline silicon thin films 289
Modeling of aluminum induced lateral crystallization of hydrogenated amorphous silicon 297
Aluminum-induced crystallization of PECVD amorphous silicon 303
Initial interaction of crystalline Al/amorphous Si bilayer during annealing 309
The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon 315
In situ aluminum-induced crystallization of Si thin-films on glass substrates above the eutectic temperature using HW-CVD 321
Solar cells on foreign substrates using poly-Si thin films by metal induced growth 327
Metal induced crystallization of SiGe at 370[degrees]C for monolithically integrated MEMS applications 333
CW argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films 339
Reel-to-reel cassette cluster tool system for thin film transistor and four terminal solar cell fabrication 347
Hydrogen injection in ETP plasma jet for fast-deposition of high-quality a-Si:H 359
Optical and electronic characterization of a-SiGe:H thin films prepared by a novel hollow cathode deposition technique 365
Low-temperature silicon films deposition by pulsed cathodic arc process for microsystem technologies 371
Growth and characterization of poly-SiGe prepared by reactive thermal CVD 377
External rf substrate biasing during a-Si:H film growth using the expanding thermal plasma technique 383
Structural and electronic properties of SiCl[subscript 4]-based microcrystalline silicon films 389
Growth of hydrogenated microcrystalline silicon ([mu]c-Si:H) films by HWCVD using a graphite catalyzer 395
Influence of catalyzer area and design on the growth of intrinsic hot-wire CVD thin-film silicon for photovoltaic applications 401
Deposition of optimal a-Si:H and a-SiGe:H by HWCVD using the same filament temperature and substrate temperature 407
An investigation of silicon oxide thin film by atomic layer deposition 413
High-quality hydrogen-diluted a-SiN[subscript x]:H films deposited by hot-wire chemical vapor deposition 419
Protocrystalline silicon at high rate from undiluted silane 425
Suppression of Staebler-Wronski effect induced electrical crosstalk in a-Si:H-based image sensors 435
Vertically integrated amorphous silicon particle sensors
Amorphous silicon backplane with polymer MEMS structures for electrophoretic displays 447
MEMS microresonators based on nanocrystalline silicon 453
Increase of temperature and crystallinity during electrical switching in microcrystalline silicon 459
Threshold voltage and field for metal filament formation in hydrogenated amorphous silicon 465
Development of a porous silicon product for small molecule mass spectrometry 471
Amorphous Si[subscript 1-y]Ge[subscript y]:H, F films obtained by low frequency PECVD for uncooled microbolometers 477
High current density in [mu]c-Si PECVD diodes for low temperature applications 483
Evaluation of an alternative technique for the fabrication of direct detector x-ray imagers : spray pyrolysis of lead iodide and mercury iodide 489
Two terminal large area single and double p-i-n devices for image and color recognition 495
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