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Amorphous and Nanocrystalline Silicon Science and Technology 2005: Volume 862

Overview

This book continues the long-standing and highly successful series on amorphous silicon science and technology. The opening article honors the pioneering use of photons to probe silicon films and provides an historical overview of optical absorption for studies of the Urbach edge and disorder. Additional invited presentations focus on new approaches for the fabrication of higher stability amorphous silicon-based materials and solar cells, and on the characterization of materials and cells both structurally and ...
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Materials Research Society, 09/30/2005, Hardcover, Brand New! Shrink wrapped! Volume 862.

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Overview

This book continues the long-standing and highly successful series on amorphous silicon science and technology. The opening article honors the pioneering use of photons to probe silicon films and provides an historical overview of optical absorption for studies of the Urbach edge and disorder. Additional invited presentations focus on new approaches for the fabrication of higher stability amorphous silicon-based materials and solar cells, and on the characterization of materials and cells both structurally and electronically. The book includes topics relevant to solar cells, including the role of hydrogen in metastability phenomena and deposition processes, and the application of atomistic material simulations in elucidating film growth mechanisms and structure as characterized by in situ probes. Chapters are devoted to nanostructures, such as quantum dots and wires, and to nano/microcrystalline and poly/single crystalline films, the latter involving new concepts in crystalline grain growth and epitaxy. Device applications are also highlighted, such as thin-film transistors, solar cells, and image sensors, operable on the meter scale, to memories, operable on the nanometer scale.
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Product Details

  • ISBN-13: 9781558998155
  • Publisher: Cambridge University Press
  • Publication date: 1/1/2009
  • Series: MRS Proceedings Series
  • Pages: 724
  • Product dimensions: 6.30 (w) x 9.30 (h) x 1.70 (d)

Table of Contents

Urbach edge, disorder, and absorption on-set in a-Si:H 3
Novel in situ and real-time optical probes to detect (surface) defect states of a-Si:H 19
Correlation between powder in the plasma and stability of high rate deposited a-Si:H 31
The role of SiH[subscript 3] diffusion in determining the surface smoothness of plasma-deposited amorphous Si thin films : an atomic-scale analysis 37
Development of deposition phase diagrams for thin film Si:H and Si[subscript 1-x]Ge[subscript x]:H using real time spectroscopic ellipsometry 43
Electronic properties of improved amorphous silicon-germanium alloys deposited by a low temperature hot wire chemical vapor deposition process 49
AFM morphology study of Si[subscript 1-y]Ge[subscript y]:H films deposited by LF PE CVD from silane-germane with different dilution 55
Improved optical loss characteristics of PECVD silicon oxynitride films using low frequency plasma 61
Growth chemistry of nanocrystalline Si:H films 69
Nanocrystalline Si films and devices produced using chemical annealing with helium 75
Nanocrystalline-Si thin film deposited by inductively coupled plasma chemical vapor deposition (ICP-CVD) at 150[degrees]C 81
Influence of pressure and plasma potential on high growth rate microcrystalline silicon grown by VHF PECVD 87
High density plasma processing of microcrystalline Si thin films 93
Dependence of microcrystalline silicon growth on ion flux at the substrate surface in a saddle field PECVD 99
'Seed layers' for the preparation of hydrogenated microcrystalline silicon with defined structural properties on glass 105
Crystallographic study of the initial growth region of [mu]c-Si with different preferential orientations 111
Structural and electronic properties of hydrogenated nanocrystalline silicon films made with hydrogen dilution profiling technique 117
Structure of microcrystalline solar cell materials : what can we learn from electron microscopy? 123
Microcrystalline and nanocrystalline silicon : simulation of material properties 133
Doping dependence of chlorine incorporation in SiCl[subscript 4]-based microcrystalline silicon films 139
Low substrate temperature deposition of crystalline SiC using HWCVD 145
Nanocrystalline germanium and germanium carbide films and devices 151
Real-time spectroscopic ellipsometry as an in situ probe of the growth dynamics of amorphous and epitaxial crystal silicon for photovoltaic applications 159
A phase diagram of low temperature epitaxial silicon grown by hot-wire chemical vapor deposition for photovoltaic devices 171
Silicon homoepitaxy using tantalum-filament hot-wire chemical vapor deposition 177
Growth of "new form" of polycrystalline silicon thin films synthesized by hot wire chemical vapor deposition 183
Hot-mesh chemical vapor deposition for 3C-SiC growth on Si and SiO[subscript 2] 189
Polycrystalline GeC thin films deposited using a unique hollow cathode sputtering technique 195
Micro-crystalline silicon-germanium thin films prepared by the multi-target RF sputtering system 201
Poly-crystalline Ge thin films prepared by RF sputtering method for thermo photo voltaic application 207
Ge growth on nanostructured silicon surfaces 213
GaAs growth on micro and nano patterned Ge/Si[subscript 1-x]Ge[subscript x] and Si surfaces 219
Real time monitoring of the crystallization of hydrogenated amorphous silicon 227
Solid phase crystallization of hot-wire CVD amorphous silicon films
Suppression of nucleation during the aluminum-induced layer exchange process 239
Correlation of in and ex situ stress to microstructures during Al-induced crystallization of PECVD amorphous silicon 245
TCAD modeling of metal induced lateral crystallization of amorphous silicon 251
Excimer laser crystallized HWCVD thin silicon films : electron field emission 257
Formation of a miscibility gap in laser-crystallized poly-SiGe thin films 263
Ultra-shallow junction formation by a non-melting process : double-pulsed green laser annealing 269
Application of field-enhanced rapid thermal annealing to activation of doped polycrystalline Si thin films 275
Effects of post annealing and material stability on undoped and n[superscript +] nc-Si:H films deposited at 75[degrees]C using 13.56 MHz PECVD 281
Annealing characteristics of Al-doped hydrogenated microcrystalline cubic silicon carbide films 287
Initial stage hydrogen movement and IR absorption proportionality constants in hot-wire deposited SiN[subscript 1.2]:H during high-temperature annealing 293
Electrodeposition of fluorescent Si nanomaterial from acidic sodium silicate solutions 301
High-yield synthesis of luminescent silicon quantum dots in a continuous flow nonthermal plasma reactor 307
Experimental study of silane plasma nanoparticle formation in amorphous silicon thin films 313
Effects of N[subscript 2]O fluence on the PECVD-grown Si-rich SiO[subscript x] with buried Si nanocrystals 319
CO[subscript 2] laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO[subscript 2] 325
Charging effect of a nc-Si in a SiO[subscript 2] layer observed by scanning probe microscopy 331
Conductance fluctuations in amorphous silicon nanoparticles 337
Study of the oxidation of polycrystalline SiGe : formation of Ge nanocrystals and their related luminescence 343
Formation of antimony 1D-nanostructures on Si (5 5 12) surface 351
Fabrication of one-dimensional silicon nanowires based on proximity effects of electron-beam lithography 357
Fabrication of silicon nanowire network in aluminum thin films 363
Wiring and introduction of single silicon nanocrystals into multi-walled carbon nanotubes 369
Metal induced growth of poly-Si solar cells and silicide nanowires by use of multiple catalyst layers 375
New light trapping in thin film solar cells using textured photonic crystals 381
Advances in amorphous silicon integrated photonics science and technology 387
Fabrication of nano-crystalline porous silicon on Si substrates by a plasma enhanced hydrogenation technique 393
Application of spectroscopic ellipsometry and infrared spectroscopy for the real-time control and characterization of a-Si:H growth in a-Si:H/c-Si heterojunction solar cells 401
High-performance amorphous silicon emitter for crystalline silicon solar cells 413
Bifacial silicon heterojunction solar cell with deposited back surface field 419
Electron field emission from SiC/Si heterostructures formed by carbon implantation into silicon and etching of the top silicon layer 425
Application of SC-simul for numerical modeling of the opto-electronic properties of heterojunction diodes 431
Characterization of amorphous silicon by secondary ion mass spectrometry 439
Observation of a hydrogen doublet site in high defect density as-grown a-Si:H by [superscript 1]H NMR 445
The nature of native and light induced defect states in i-layers of high quality a-Si:H solar cells derived from dark forward-bias current-voltage characteristics 451
The creation and annealing kinetics of fast light induced defect states created by 1 sun illumination in a-Si:H 457
Light-intensity dependence of the Staebler-Wronski effect in a-Si:H with various densities of defects 463
Effect of Fermi level position in intrinsic a-Si:H on the evolution of defect states under light exposure 469
Light-soaking effects on the open-circuit voltage of a-Si:H solar cells 475
The effects of hydrogen profiling and of light-induced degradation on the electronic properties of hydrogenated nanocrystalline silicon 481
Comparison of the effect of light soaking in porous silicon and a-Si:H 487
Optical properties of amorphous silicon-yttrium films 495
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