Beyond the Desert 99: Accelerator, Non-accelerator and Space Approaches into the Next Millennium, Second International Conference on Particle Physics Beyond the Standard Model, Castle Ringberg, Germany, 6-12 June 1999 / Edition 1

by H. V. Klapdor-Kleingrothaus

Overview

Addressing the need for an up-to-date reference on silicon devices and heterostructures, Beyond the Desert 99 reviews the technology used to grow and characterize Goup IV alloy films. It covers the theory, device design, and simulation of heterojunction transistors, emphasizing their relevance in developing the technologies involving strained layers; device design and simulation of conventional silicon bipolar transistors and SiGe HBTs at room and low temperatures; and device design and simulation for MOSFETs, including SiGe and strained-Si channel MOSFETs. The book concludes with simulations and examples of different applications. It provides a unified reference for scientists and engineers investigating the use of SiGe and strained silicon in a new generation of high-speed circuit applications.

Product Details

ISBN-13:	9780750307314
Publisher:	Taylor & Francis
Publication date:	01/01/2000
Pages:	1268
Product dimensions:	6.12(w) x 9.19(h) x (d)

About the Author

H. V. Klapdor-Kleingrothaus

Table of Contents

Introduction. Group IV alloy layers: growth and characterization. HBT principles. Model formulation. HBT: Device design and simulation. Strained-Si heterostructure FETs. Device design and simulation. Simulation applications: examples. SiGe HBT applications. Index.