Characterization in Compound Semiconductor Processing

Characterization in Compound Semiconductor Processing for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction.

1101378072
Characterization in Compound Semiconductor Processing

Characterization in Compound Semiconductor Processing for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction.

72.95 In Stock
Characterization in Compound Semiconductor Processing

Characterization in Compound Semiconductor Processing

by Gary E. McGuire
Characterization in Compound Semiconductor Processing

Characterization in Compound Semiconductor Processing

by Gary E. McGuire

Hardcover

$72.95 
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Overview

Characterization in Compound Semiconductor Processing for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction.


Product Details

ISBN-13: 9781606500415
Publisher: Momentum Press
Publication date: 12/01/2009
Pages: 199
Product dimensions: 6.00(w) x 9.30(h) x 0.60(d)

Table of Contents

Preface to the Reissue of the Materials Characterization Series ix

Preface to Series x

Preface to the Reissue of Characterization of Compound Semiconductor Processing xi

Preface xiii

Contributors xv

Characterization of III-V Thin Films for Electronic Devices

1.1 Introduction 1

1.2 Surface Characterization of GaAs Wafers 2

Dislocations 3

Surface Composition and Chemical State 4

1.3 Ion Implantation 6

1.4 Epitaxial Crystal Growth 11

1.5 Summary 13

III-V Compound Semiconductor Films for Optical Applications

2.1 Introduction 17

2.2 Growth Rate/Layer Thickness 20

In Situ Growth Monitors 20

Post-Growth Structural Analysis 22

2.3 Composition Analysis 23

2.4 Impurity and Dopant Analysis 27

2.5 Electrical Properties in Optical Structures 28

2.6 Optical Properties in Single and Multilayer Structures 33

2.7 Interface Properties in Multilayer Structures 35

2.8 Summary 37

3.1 Introduction 41

3.2 In Situ Probes 44

Surface Preparation and Characterization 44

Initial Metal Deposition 45

Subsequent Metal Deposition 48

3.3 Unpatterned Test Structures 48

Electrical Characterization 48

Concentration Profiling 49

Electron Microscopy 49

3.4 Patterned Test Structures 51

Barrier Height 51

Contact Resistance 53

Morphology 54

Dielectric Insulating Layers

4.1 Introduction 57

4.2 Oxides and Oxidation 58

4.3 Heteromorphic Insulators 60

4.4 Chemical Modification of GaAs Surfaces 61

4.5 Indium Phosphide-Insulator Interfaces 64

4.6 Heterojunction Quasi-Insulator Interfaces 68

4.7 Epitaxial Fluoride Insulators 72

4.8 Commentary 74

Other Compound Semiconductor Films

5.1 Introduction 83

A Focus on HgCdTe 83

Objective and Scope 84

Background 84

Representative Device Structure 86

5.2 Substrates and the CdTe Surface (Interface 1) 86

Substrate Quality 86

Substrate Surface Preparation 87

5.3 Epitaxial HgCdTe Materials (Between Interfaces 2 and 5) 90

Desired Characteristics of the Active Layers 90

Composition 90

Crystalline Quality 91

Doping 93

Minority Carrier Lifetime 96

5.4 Heterojunction Interfaces (Interface 3) 98

Advantages of the Heterojunction 98

Desired Characteristics 98

Characterizations 99

5.5 HgCdTe Surface Preparation (Interfaces 4 and 5) 100

Importance of the Chemically Etched Surface 100

Monitoring of the Surface Cleanliness by Ellipsometry 101

Characterization of Thin Native Oxides on HgCdTe by XPS 102

Surface Analysis by UPS 104

5.6 Summary 105

Deep Level Transient Spectroscopy: A Case Study On GaAs

6.1 Introduction 109

6.2 DLTS Technique: General Features 110

6.3 Fabrication and Qualification of Schottky Diodes 111

6.4 DLTS System 114

6.5 DLTS Measurement Procedure 116

6.6 Data Analysis 117

DLTS Spectrum 117

Activation Energy for Thermal Emission 118

Trap Densities 120

6.7 EL2 Center 121

6.8 Summary 121

Appendix: Technique Summaries

1 Auger Electron Spectroscopy (AES) 127

2 Ballistic Electron Emission Microscopy (BEEM) 128

3 Capacitance-Voltage (C-V) Measurements 135

4 Deep Level Transient Spectroscopy (DLTS) 137

5 Dynamic Secondary Ion Mass Spectrometry (D-SIMS) 139

6 Electron Beam Induced Current (EBIC) Microscopy 140

7 Energy-Dispersive X-Ray Spectroscopy (EDS) 146

8 Focused Ion Beams (FIBs) 147

9 Fourier Transform Infrared Spectroscopy (FTIR) 151

10 Hall Effect Resistivity Measurements 152

11 Inductively Coupled Plasma Mass Spectrometry (ICPMS) 154

12 Light Microscopy 155

13 Low-Energy Electron Diffraction (LEED) 156

14 Neutron Activation Analysis (NAA) 157

15 Optical Scatterometry 158

16 Photoluminescence (PL) 159

17 Raman Spectroscopy 160

18 Reflection High-Energy Electron Diffraction (RHEED) 161

19 Rutherford Backscattering Spectrometry (RBS) 162

20 Scanning Electron Microscopy (SEM) 163

21 Scanning Transmission Electron Microscopy (STEM) 164

22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM) 165

23 Sheet Resistance and the Four Point Probe 166

24 Spreading Resistance Analysis (SRA) 175

25 Static Secondary Ion Mass Spectrometry (Static SIMS) 183

26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling 184

27 Total Reflection X-Ray Fluorescence Analysis (TXRF) 185

28 Transmission Electron Microscopy (TEM) 186

29 Variable-Angle Spectroscopic Ellipsometry (VASE) 187

30 X-Ray Diffraction (XRD) 188

31 X-Ray Fluorescence (XRF) 189

32 X-Ray Photoelectron Spectroscopy (XPS) 190

Index 191

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