CMOS Memory Circuits

by Tegze P. Haraszti

Overview

CMOS Memory Circuits is a systematic and comprehensive reference work designed to aid in the understanding of CMOS memory circuits, architectures, and design techniques.
CMOS technology is the dominant fabrication method and almost the exclusive choice for semiconductor memory designers.
Both the quantity and the variety of complementary-metal-oxide-semiconductor (CMOS) memories are staggering. CMOS memories are traded as mass-products worldwide and are diversified to satisfy nearly all practical requirements in operational speed, power, size, and environmental tolerance. Without the outstanding speed, power, and packing density characteristics of CMOS memories, neither personal computing, nor space exploration, nor superior defense systems, nor many other feats of human ingenuity could be accomplished. Electronic systems need continuous improvements in speed performance, power consumption, packing density, size, weight, and costs. These needs continue to spur the rapid advancement of CMOS memory processing and circuit technologies.
CMOS Memory Circuits is essential for those who intend to (1) understand, (2) apply, (3) design and (4) develop CMOS memories.

Product Details

ISBN-13:	9780792379508
Publisher:	Springer US
Publication date:	09/30/2000
Edition description:	2002
Pages:	551
Product dimensions:	6.10(w) x 9.25(h) x 0.05(d)

Table of Contents

to CMOS Memories.- Memory Cells.- Sense Amplifiers.- Memory Constituent Subcircuits.- Reliability and Yield Improvement.- Radiation Effects and Circuit Hardening.

Editorial Reviews

Based largely on material he used in graduate and extension courses (U. of California-Berkeley), Haraszti, now in the private sector, presents the operation, analysis, and design of complementary-metal- oxide-semiconductor (CMOS) memory circuits and architectures that have been successfully used and that are anticipated to increase their range of applications. After an introduction to CMOS memories, he covers memory cells, sense amplifiers, memory constituent subcircuits, reliability and yield improvement, and radiation effects and circuit hardening. The circuits and architectures he describes are specified to CMOS nonprogrammable write-read and read-only memories, because programmable memories have become a separate and extensive area in semiconductor memories. Annotation c. Book News, Inc., Portland, OR (booknews.com)

Booknews