Control of Semiconductor Surfaces and Interfaces: Volume 448

Overview

Semiconductor surfaces and interfaces play a vital role in modern-day electronic devices. This is especially true as device dimensions shrink. The properties of clean surfaces and chemically processed surfaces can also have a significant impact on the properties of subsequently grown layers. These surfaces and interfaces may exhibit modified structural, electronic and optical properties, so it is important to understand their effects on subsequent growth, processing and device fabrication. Topics in the book ...

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Overview

Semiconductor surfaces and interfaces play a vital role in modern-day electronic devices. This is especially true as device dimensions shrink. The properties of clean surfaces and chemically processed surfaces can also have a significant impact on the properties of subsequently grown layers. These surfaces and interfaces may exhibit modified structural, electronic and optical properties, so it is important to understand their effects on subsequent growth, processing and device fabrication. Topics in the book include: structure of surfaces; control of surface defects and properties through chemical etching and passivation; modification of surfaces for growth and processing; nucleation on semiconductor surfaces and self-assembly; the effects of surfaces and interfaces on subsequent growth; and the properties of semiconductor/dielectric and semiconductor/ metal interfaces. In situ and ex situ monitoring of these properties, using various electrical and optical techniques are also presented.

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Editorial Reviews

Booknews
Proceedings of the December 1996 symposium, presenting the latest research on the structure of surfaces, control of surface defects and properties through chemical etching and passivation, modification of surfaces for growth and processing, nucleation on semiconductor surfaces and self-assembly, effects of surfaces and interfaces on subsequent growth, and properties of semiconductor/dielectric and semiconductor/metal interfaces. "In situ" and "ex situ" monitoring of these properties, using various electrical and optical techniques, is also discussed. Annotation c. by Book News, Inc., Portland, Or.
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Product Details

  • ISBN-13: 9781558993525
  • Publisher: Materials Research Society
  • Publication date: 6/1/1997
  • Series: MRS Proceedings Series
  • Pages: 505
  • Product dimensions: 6.30 (w) x 9.30 (h) x 1.30 (d)

Table of Contents

Preface
Chemically Stable Semiconductor Surface Layers Using Low-Temperature Grown GaAs 3
Surface Reconstruction and Morphology of Hydrogen Sulfide Treated GaAs(001) Substrate 15
Improvement of InGaP/GaAs Heterointerface Quality by Controlling AsH[subscript 3] Flow Conditions 21
Processing of InP and GaAs Surfaces by Hydrogen and Oxygen Plasmas: In situ Real-Time Ellipsometric Monitoring 27
Characterization of GaAs Surfaces Subjected to A Cl[subscript 2]/Ar High-Density Plasma-Etching Process 33
Cl[subscript 2] Plasma Etching of Si(100): Surface Chemistry and Damage 39
Theory of Reactive Adsorption on Si(100) 45
Nonradiative Recombination on Si Surfaces During Anodic Oxidation in Fluoride Solution 51
Advanced Lithography for Nanofabrication 57
In situ Infrared Observation of Hydrogenation, Oxidation, and Adsorption on Silicon Surfaces in Solutions 63
Analysis of InP Passivated With Thiourea/Ammonia Solutions and Thin CdS Films 69
Surface Oxidation Study of Silicon-Doped GaAs Wafers by FTIR Spectroscopy 75
Chemical Characterization by FT-IR Spectrometry and Modification of the Very First Atomic Layer of a TiO[subscript 2] Nanosized Powder 81
In situ Etch to Improve Chemical Beam Epitaxy Regrown AlGaAs/GaAs Interfaces for HBT Applications 87
Ultrahigh Vacuum Scanning Tunneling Microscopy Observation of Multilayer Step Structure on GaAs and AlAs Vicinal Surface Grown by Metalorganic Vapor-Phase Epitaxy 95
In situ Optical Observation and Control of Initial Stages of GaAs Growth on CaF[subscript 2] Surface Modified by Electron Beam Irradiation 101
Formation of ZnSe/GaAs Heterovalent Heterostructures by MOVPE 107
Atomic Hydrogen-Assisted Growth of Si-Ge Heterostructures on (001)Si 113
Surface Reactions During the Deposition of Ge From Chemical Sources on Ge(100)-(2x1) 119
Physics and Control of Si/Ge Heterointerfaces 125
Surfactant-Mediated Si/Ge Epitaxial Crystal Growth 135
Growth of ZnSe-Based Compounds on Ge-Terminated GaAs Surface 141
Anisotropy in Atomic-Scale Interface Structure and Mobility In InAs/Ga[subscript 1-x]In[subscript x]Sb Superlattices 147
Interface Roughness in Strained Si/SiGe Multilayers 153
Surface Roughening and Composition Modulation of ZnSe-Related II-VI Epitaxial Films 159
Direct-Bandgap Quantum Wells on GaP 165
Formation of Large Conduction Band Discontinuities of Heterointerfaces Using CdF[subscript 2] and CaF[subscript 2] on Si(111) 171
Modification of the Surface and Band-Bending of a Silicon CCD for Low-Energy Electron Detection 177
Comparison of the Morphological and Optical Characteristics of InP Islands on GaInP/GaAs (311)A and (100) 187
A Self-Organized Molecular Beam Epitaxial Growth of the InSb/AlGaSb Quantum Dots on High-Index GaAs Substrates 193
Structural Investigations of Self-Assembled Ge Dots by X-ray Diffraction and Reflection 199
Antimony Cluster Manipulation on the Si(001) Surface by Means of STM 205
Direct Formation of Fine Structure by Low-Energy Focused Ion Beam 211
Surface Adsorption Kinetics of Ga Wire Arrays on Si(112) 217
Surface Morphology of Nanoscale TiSi[subscript 2] Epitaxial Islands on Si(001) 223
Structural Defects in Thick InGaAs Layers Grown by LPEE on Partially Masked GaAs Substrates 231
Facet Formation in Submicron Selective Growth of Si/SiGe 241
GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications 253
Selective Growth of MOVPE on AlGaAs/GaAs Patterned Substrates for Quantum Nanostructures 259
Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low-Pressure Chemical Vapor Deposition Systems 265
Ultrathin SiO[subscript 2] Mask Layer for Nanoscale Selective-Area PECVD of Si 271
Solid-Phase Crystallization of LPCVD Amorphous Si Films by Nucleation Interface Control 277
Interfacial Arsenic From Wet Oxidation of Al[subscript x]Ga[subscript 1-x]As/GaAs: Its Effects on Electronic Properties and New Approaches to MIS Device Fabrication 285
Microstructure and Interfacial Properties of Laterally Oxidized Al[subscript x]Ga[subscript 1-x]As 291
Nitridation of Si(111)-7 x 7 Surface by Low-Energy Nitrogen Ions: STM Investigation 297
The Effect of Processing Conditions on the Structure of Buried Interfaces Between Silicon and Silicon Dioxide 303
Spectroscopic Investigation of Lithium Intercalation in Thin Films of Anatase Titanium Dioxide 309
Improvement of Ultrathin Oxides by Postoxidation Annealing 315
Charge Trapping and Degradation of High Permittivity TiO[subscript 2] Dielectric Metal-Oxide-Semiconductor Field Effect Transistors 321
Interface Properties of Si[subscript 3]N[subscript 4]/Si/n-GaAs Metal-Insulator-Semiconductor Structures Grown on GaAs(111)B Substrate 327
Interfacial Layer Formation of a Heat-Treated TEOS-Based Oxide Prepared by a PECVD Technique 333
Field Emission Through Diamond/Mo Interfaces 339
Suppression of Surface SiO[subscript 2] Layer and Solid-Phase Epitaxy of Amorphously Deposited Si Films Using Heating-Up Under Si[subscript 2]H[subscript 6] Environment 345
HRLEED and STM Study of Misoriented Si(100) With and Without a Te Overlayer 353
Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC 359
Thin Films of CoSi[subscript 2] Co-Deposited Onto Si[subscript 1-x]Ge[subscript x] Alloys 365
Segregation of Copper to (100) and (111) Silicon Surfaces in Equilibrium With Internal Cu[subscript 3]Si Precipitates 371
Surface and Interface Anal
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