December 16
No detailed description available for "December 16".
1142881759
December 16
No detailed description available for "December 16".
155.99 In Stock
December 16

December 16

December 16

December 16

Hardcover(Reprint 2021)

$155.99 
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No detailed description available for "December 16".

Product Details

ISBN-13: 9783112472774
Publisher: De Gruyter
Publication date: 01/14/1978
Edition description: Reprint 2021
Pages: 488
Product dimensions: 6.69(w) x 9.61(h) x 1.06(d)
Age Range: 18 Years

Table of Contents

Frontmatter — Contents — Original Papers — Nucleus Saturation Density and Epitaxy in the Condensation of Metals on Alkali-Halide Crystals — Weak Ferromagnetism and Magnetic Structure of TlMnCIg — Investigation of Shallow Radiation Defect Levels Produced in Ge by Fast-Neutron Irradiation — Mössbauer Studies of Natural Goethite and Bog Iron Ore — Thermally-Assisted Tunnelling in Composite Barrier Heterojunctions — Mean Mobile Dislocation Velocity in LiF Crystals under Strain — Experimental Aspects of Electron Channeling Patterns in Scanning Electron Microscopy — Mechanism of Superplastic Deformation in a Magnesium Alloy (II) — Etude des diagrammes de pseudo-lignes de Kikuchi obtenues par une méthode d'observation en condenseur-objectiï — Influence of Chemical Composition within the Range of Homogeneity on Phase Transition and Transition Temperature of V8Si Single Crystals — Mechanism of Restored Thermoluminescence in Lithium Fluoride — Thermodynamics of Phase Transitions in Iron — An X-Ray Diffraction Study of Diffusional Homogenization in RbCl-KCl Powder Blends — Phase Boundaries in Ammonium Sulfate — X-Ray Induced Change of Initial Permeability in Polycrystalline YIG(Me4+) — Supersaturation and Mode of Growth for Fe Films onCu(lll) — An Experimental Study Using LEED and AES — A Calculation of Dislocation Densities in Quenched a-Iron from Internal Friction Experiments — X-Ray Investigation of the Anisotropic Thermal Motion of Atoms in Tellurium — Self-Diffusion in Copper at "Low" Temperatures — A Study of V-VOx-Pb Josephson Tunnel Junctions — Application of the Kelvin Method for Oxide Charge Evaluation in Si-Si02 Structures — Search for Magnetic Order in Selected Pseudobinary Systems down to Millikelvin Temperatures — Mossbauer Polarimetry Using Fluosilicates. Double Motion Drive and Effective Thickness Measurements — The Elastic Behaviour of p2-NiAl Alloys — Mobility in p-Pbi-aSn^Te — On the Analysis of Complex TSC Patterns — Discrete Dislocation Analysis of a Plastic Tensile Crack — The Mechanism of Charge Compensation Occurring in Polycrystalline ß"- Alumina — Influence of the Elastic Anisotropy on the Contrast of Dislocation Images in Electron Microscopy and X-Ray Topography. Application to Feldspars — On the Soft Modes in (CHjNHj^CdClj — A New High-Resolution, High-Intensity Apparatus for the Study of Fermi Surfaces of Alloys by Positron Annihilation — Properties of Liquid Phase Epitaxial Ge-Doped GaAs — Thermoluminescence Related Z Centers in LiF : Mg, Ti — Electron Spin Resonance Study of Copper(II) Doped Ferroelectric Ammonium Sulphate — Forward-Bias Electroluminescence in ZnSe Diodes — Dislocations in Two-Dimensional Spaces — Etude par neutrons polarisés de l'aimantation spontanée de la cubanite — Optical Properties of Cation Colloidal Particles in CaF2 and SrF2 — Thermal Depolarization in Crystals of Rubidium Bromide Doped with Ba2+ and Sn2+ — The Amorphous Structure of CdGei_xMxAs2 (M = Si, Sn, and Pb) with x = 0.0, 0.1, and 0.2 — Cation Distributions in Nickel Ferrite-Aluminates — Electric Field Gradient at the Electron Site in Cesium Halides — On the Mechanism of Photoluminescence of Cadmium Diphosphide Doped by Bi and Zn — Influence of Vanadium on Hydrogen Diffusion and Phase Constitution in Ti-H — Dislocation Multiplication — Bubble Conversion to "Anomalous" Behaviour — Effect of the 0.94, 1.0, 1.2, and 1.3 eV Radiative Centres on the Intrinsic Luminescence Intensity in n-GaAs — Dielectric and Infrared Spectral Studies of the (Nai^La^^Bai-^TiOj System — Investigation of Non-Equilibrium Processes in Semiconductors by the Method of Transient Holograms — Short Notes
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