Deep-Submicron CMOS ICs: From Basics to ASICs / Edition 2by Harry Veendrick
Pub. Date: 12/31/2000
Publisher: Springer US
Nowadays, CMOS technologies account for almost 90% of all integrated circuits (ICs). This book provides an essential introduction to CMOS ICs. The contents of this book are based upon a previous publication, entitled 'MOS Ics', which was published in Dutch and English by Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively.… See more details below
Nowadays, CMOS technologies account for almost 90% of all integrated circuits (ICs). This book provides an essential introduction to CMOS ICs. The contents of this book are based upon a previous publication, entitled 'MOS Ics', which was published in Dutch and English by Delta Press (Amerongen, The Netherlands, 1990) and VCH (Weinheim, Germany, 1992), respectively.
This book contains state-of-the-art material, but also focuses on aspects of scaling up to and beyond 0.1 mm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into various aspects of design, implementation and application. In contrast to other works on this topic, the book explores all associated disciplines of deep-submicron CMOS ICs, including physics, design, technology and packaging, low-power design and signal integrity. The text is based upon in-house Philips courseware, which, to date, has been completed by more than 1500 engineers. Carefully structured and enriched by hundreds of figures, photograhs and in-depth exercises, the book is well-suited for the purpose of self-study.
This second edition contains some corrections and is completely updated with respect to the previous one. In the one-and-a-half years of its existance, the first edition has already been used in more than ten in-house courses. Several typing errors and the like, which showed up during these courses, have been corrected. Moreover, most of the chapters have been updated with state-of-the-art material. Numbers that describe trends and roadmaps have been updated as well, to let the contents of this book be valuable for at least another five years.
- Springer US
- Publication date:
- Edition description:
- 2nd ed. 2000
- Product dimensions:
- 6.83(w) x 9.71(h) x 1.48(d)
Table of Contents
|Overview of symbols|
|List of physical constants|
|2||Physical and geometrical effects on the behaviour of the MOS transistor||53|
|3||Manufacture of MOS devices||81|
|5||Special circuits, devices and technologies||209|
|7||Very Large Scale Integration (VLSI) and ASICs||273|
|8||Low power, a hot topic in IC design||337|
|9||Circuit reliability and signal integrity in deep-submicron designs||385|
|10||Testing, debugging, yield and packaging||441|
|11||Effects of scaling on MOS IC design and consequences for the roadmap||503|
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