Defect-Interface Interactions: Volume 319

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

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Editorial Reviews

Proceedings of a symposium held at the 1993 MRS Fall Meeting in Boston. The papers are arranged topically in three sections: heterostructures, grain boundary structure and behavior, and point defects and diffusion. Presentations range from basic theoretical calculations to correlations of data with predictions to observations of new and unexplained behaviors. Annotation c. Book News, Inc., Portland, OR (
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Product Details

  • ISBN-13: 9781558992184
  • Publisher: Materials Research Society
  • Publication date: 3/10/1994
  • Series: MRS Proceedings Series
  • Pages: 467
  • Product dimensions: 6.10 (w) x 9.30 (h) x 1.20 (d)

Table of Contents

Materials Research Society Symposium Proceedings
Misfit Dislocations at Metal/Ceramic Interfaces 3
HREM Investigation of Al-MgO Interface 15
Structure-Property Relationship of Metal-Ceramic Interfaces Produced by Laser Processing 21
HREM Observations, Peels Analysis and Numerical Simulations of Au/Ni MBE Multilayers 33
Molecular Statics of a Ni/Zr Heterophase Interface 39
The Nature of Oxygen-Related Polytypoids in the Aluminum Nitride-Aluminum Oxide System 45
Interfaces in Silicon Carbide Whisker and Carbon Fiber Reinforced Calcium Phosphate Composites 51
The Use of Thin Film Substrates to Study Enhanced Solid-State Phase Transformations 57
Observation of the Phase-Boundary Controlled Formation of NiAl[subscript 2]O[subscript 4] from a Single-Crystal NiO Thin Film and a Single-Crystal [alpha]-Al[subscript 2]O[subscript 3] Substrate 63
Transmission Electron Microscopy Studies of a Complex Oxide System 69
Second Phases and Impurity Segregations in MgO- and NiO-Co-Doped Alumina 75
TEM Analysis of Interfacial Reactions Between TiWN, WN Gate Metallizations and GaAs in Mesfet Devices 81
Characteristics of PdAl Schottky Contacts to n-GaAs 87
The Development of Solid Phase Regrowth on GaAs and Its Applications 93
Interdiffusion Enhancement in AlGaAs/GaAs Superlattices in the Presence of Carbon 105
Atomic Scale Interface Structure of In[subscript 0.2]Ga[subscript 0.8]As/GaAs Strained Layers Studied by Cross-Sectional Scanning Tunneling Microscopy 111
TEM Studies of Impurity Induced Defects in GaAs Grown by CBE 117
Determination of the State of Deformation in Epitaxial Layers Using High Resolution X-Ray Diffraction 123
TEM Investigation of CdTe/GaAs(001) Interfaces 129
Relationship Between Crystal Defects, Ge Outdiffusion and V/III Ratio in MOVPE Grown (001) GaAs/Ge 135
A Novel Approach for the Production of Low Dislocation Relaxed SiGe Material 141
Nucleation of Dislocations in SiGe Layers 147
Simulations of the Dislocation Array at Ge/Si Interfaces 153
Behavior of Damage in Selectively Implanted SiGe/Si 159
Dissociation of Misfit Dislocations in GeSi/{111}Si Interfaces 165
Defect Growth Interruption Phenomena Related to Impurity Atoms in Growing Multilayer Si-Si[subscript 1-x]Ge[subscript x] Systems Deposited by APCVD 171
Observation of Open-Ended Stacking Fault Tetrahedra in Si[subscript 0.85]Ge[subscript 0.15] Grown on V-Grooved (001) Si and Planar (111) Si Substrates 177
Diffusion of Ge Along Grain Boundaries During Oxidation of Polycrystalline Silicon-Germanium Films 183
Formation of Extrinsic Defects at the Amorphous-Crystalline Interface in Ion-Implanted Silicon 189
Microstructural Examination of Extended Crystal Defects in Silicon Selective Epitaxial Growth (SEG) 195
On In-Situ Study of Dislocation/Grain Boundary Interactions Using X-Ray Topography and TEM 203
In-Situ IMEV TEM and HREM Study of the Deformation and the Transformation of Symmetrical Tilt Grain Boundaries in Ge and Si 215
The Morphology of Grain Boundary Interactions with Twins in [actual symbol not reproducible] 227
Atomic Scale Structure and Chemistry of Interfaces by Z-Contrast Imaging and Electron Energy Loss Spectroscopy in the Stem 233
Atomistic Calculations and HRTEM Observations of An {001} Tilt Boundary in Rutile 239
Crystallite Rotation Experiments Revisited: The Contribution of Free-Surface Interactions 245
A Modified Approach to the Modelling of Grain Boundary Structure in Materials with an Hexagonal Crystal Structure 251
A Multi-Plane Model for Defect Nucleation at Cracks 257
The Slip Transfer Process through Grain Boundaries in HCP Ti 263
Migration Dynamics of a [Sigma] = 3 {112} Boundary in Aluminum 273
Interactions of Dislocations and Deformation Twins with Interfacial Boundaries in Titanium Aluminides 279
The Interaction Between Dislocations and Lamellar Grain Boundaries in PST [gamma] TiAl 285
Structural Evolution and Deformation in an Aluminum-Based Solid Solution Alloy with Submicron Grain Size 293
Experimental Measurement of the Local Electronic Structure of Grain Boundaries in Ni[subscript 3]Al 299
Nearly Dislocation-Free APB Termination at Pure Grain Boundary Step Defects in Ll[subscript O] Alloys 305
On the Mechanism of Transformation of [gamma]-TiAJ from [actual symbol not reproducible] 311
Computer Simulation of Creation of Dislocations in Copper Small Crystals 319
Computer Simulation of Tensile Deformation of Titanium Small Single Crystals with Stacking Faults 325
Computer Simulation of Creation of Dislocations in Titanium Small Crystals 331
Sans Measurements of Deuterium Trapped at Grain Boundaries in Palladium 339
Localized Influence of Solute on the Stacking Fault Energy of Dilute Al-Based Solid Solutions 345
Growth of Grain Boundary Precipitates as a Function of Misorientation in an Al-5 WT% Cu Alloy 351
Grain Boundary Precipitate Density as a Function of Time and Misorientation in an Al-5 Wt% Cu Alloy 357
Effect of Boron and Hydrogen on the Electronic Structure of Ni[subscript 3]Al 363
Effect of Molybdenum on the Electronics Structure of Iron Grain Boundaries with Phosphorus and Boron 369
Computer Simulation of Vacancy Segregation at Antiphase Domain Boundaries During Coarsening 375
Interface Controlled Amorphization of Crystalline Ni/Ti Multilayers 381
Diffusion-Induced Grain Boundary Migratio
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