Electromigration and Electronic Device Degradation

by Aris Christou (Editor)

Overview

Addresses electromigration failure modes in electronics covering both theory and experiments. Reviews silicon and GaAs technologies. Various rate controlling details are summarized including an investigation of temperature dependence. Concludes with a discussion regarding current status and future plans for electromigration resistant advanced metallization systems for VLSI.

Product Details

ISBN-13:	9780471584896
Publisher:	Wiley
Publication date:	01/14/1994
Pages:	360
Product dimensions:	6.30(w) x 9.45(h) x 0.79(d)

About the Author

Aris Christou is the author of Electromigration and Electronic Device Degradation, published by Wiley.

Table of Contents

Reliability and Electromigration Degradation of GaAs MicrowaveMonolithic Integrated Circuits (A. Christou).

Simulation and Computer Models for Electromigration (P.Tang).

Temperature Dependencies on Electromigration (M. Pecht & P.Lall).

Electromigration and Related Failure Mechanisms in VLSIMetallizations (A. Christou & M. Peckerar).

Metallic Electromigration Phenomena (S. Krumbein).

Theoretical and Experimental Study of Electromigration (J.Zhao).

GaAs on Silicon Performance and Reliability (P. Panayotatos, etal.).

Electromigration and Stability of Multilayer Metal-SemiconductorSystems on GaAs (A. Christou).

Electrothermomigration Theory and Experiments in Aluminum Thin FilmMetallizations (A. Christou).

Reliable Metallization for VLSI (M. Peckerar).

Index.

Editorial Reviews

Electricity leaks, as people have known for quite awhile, but only with the emergence of thin metal films in microelectronics has it become a problem. Ion transport as a result of high current densities, as it is more formally known, can cause voids, open circuits, and hillocks that result in shorts between adjacent interconnect stripes. Industrial and academic researchers review the current understanding of the phenomenon and how to mitigate its effect when designing electronic devices. Covers both GaAs integrated circuits and silicon VLSI circuits, and the differences between them. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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