GaN and ZnO-based Materials and Devices

Overview

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

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Overview

The AlInGaN and ZnO materials systems have proven to be one of the scientifically and technologically important areas of development over the past 15 years, with applications in UV/visible optoelectronics and in high-power/high-frequency microwave devices. The pace of advances in these areas has been remarkable and the wide band gap community relies on books like the one we are proposing to provide a review and summary of recent progress.

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Product Details

  • ISBN-13: 9783642235207
  • Publisher: Springer Berlin Heidelberg
  • Publication date: 1/16/2012
  • Series: Springer Series in Materials Science, #156
  • Edition description: 2012
  • Edition number: 1
  • Pages: 486
  • Product dimensions: 6.20 (w) x 9.10 (h) x 1.20 (d)

Meet the Author

Steve Pearton is one of the leaders in the field of GaN research and a co-author of another related successful Springer book.

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Table of Contents

1. UV LEDs-Michael Shur (RPI, email shurm@rpi.edu)
2. Non-Polar GaN Growth-Jung Han (Yale, email jung.han@yale.edu)
3. High Quality AlGaN Alloys-Hongxing Jiang and Jingyu Lin (Texas Tech, email hx.jiang@ttu.edu and jingyu.lin@ttu.edu)
4. Bulk AlN for UV LEDs –L.J. Schowalter (Crystal IS, email Leo@crystal-IS.com)
5. Enhancement of the Light-Extraction Efficiency of GaN-Based Light Emitting Diodes-Jihyun Kim (Korea University, Seoul 136-701, Korea, email: hyunhyun7@.korea.ac.kr )
6. GaN-Based Sensors-F. Ren (Univ. Florida, email ren@che.ufl.edu)
7. III-N Alloys for Solar Power Conversion-Wladek Walukievicz (LBL, email W_Walukiewicz@lbl.gov)
8. GaN HEMT Technology-Wayne Johnson (Kopin, email Wayne_Johnson@kopin.com)
9. GaN Power Devices-John Shen (Univ.Central Florida, email johnshen@mail.ucf.edu)-
10. Nitride Nanostructures-Li-Chyong Chen (National Taiwan University, email chenlc@ntu.edu.tw)
11. Radiation-Induced Defects in GaN-Alexander Polyakov (IRM, Russia, email aypolyakov@gmail.com)
12. Electron Injection Effects in GaN-L. Chernyak (Univ. Central Florida, email chernyak@physics.ucf.edu)
13. Progress and Prospect of Rare-Earth Nitrides- R. Palai ( Department of Physics, University of Puerto Rico, San Juan, PR, 00931, USA, email: r.palai@uprrp.edu)-
14. Advances in PLD of ZnO and related compounds-Ashutosh Tiwari, (Dept. of Materials Science & Engineering, University of Utah, E-mail: tiwari@eng.utah.edu)
15. ZnO nanowires and p-type doping-Deli Wang (UCSD, Electrical and Computer Engineering, email dwang@ece.ucsd.edu)
16. Multifunctional ZnO Structures-Yicheng Lu (Rutgers, email ylu@ece.rutgers.edu)-
17. ZnO/MgZnO Quantum Wells-C. Jagadish (ANU, Australia, email cxj109@rsphysse.anu.edu.au)
18. GZO TFTs-E.Fortunato(CENIMAT, FCT-UNL, Campus de Caparica, 2829-516 Caparica, Portugal, email elvira-fortunato@fct.unl.pt )

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