Group IV Semiconductor Nanostructures ? 2006: Volume 958

Group IV Semiconductor Nanostructures ? 2006: Volume 958

by Leonid Tsybeskov
     
 

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This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these…  See more details below

Overview

This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.

Product Details

ISBN-13:
9781107408791
Publisher:
Cambridge University Press
Publication date:
06/05/2014
Series:
MRS Proceedings
Pages:
326
Product dimensions:
5.98(w) x 9.02(h) x 0.67(d)

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