Hierarchical Device Simulation: The Monte-Carlo Perspective

Hierarchical Device Simulation: The Monte-Carlo Perspective

by Christoph Jungemann, Bernd Meinerzhagen
     
 

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this

Overview

This monograph is intended for scientists and TCAD engineers who are interested in physics-based simulation of Si and SiGe devices. The common theoretical background of the drift-diffusion, hydrodynamic, and Monte-Carlo models and their synergy are discussed and it is shown how these models form a consistent hierarchy of simulation tools. The basis of this hierarchy is the full-band Monte-Carlo device model which is discussed in detail, including its numerical and stochastic properties. The drift-diffusion and hydrodynamic models for large-signal, small-signal, and noise analysis are derived from the Boltzmann transport equation in such a way that all transport and noise parameters can be obtained by Monte-Carlo simulations. With this hierarchy of simulation tools the device characteristics of strained Si MOSFETs and SiGe HBTs are analysed and the accuracy of the momentum-based models is assessed by comparison with the Monte-Carlo device simulator.

Product Details

ISBN-13:
9783709172261
Publisher:
Springer Vienna
Publication date:
01/28/2013
Series:
Computational Microelectronics Series
Edition description:
Softcover reprint of the original 1st ed. 2003
Pages:
261
Product dimensions:
6.14(w) x 9.21(h) x 0.59(d)

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