Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).
Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.
Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs).
Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.

Integrated Power Devices and TCAD Simulation
368
Integrated Power Devices and TCAD Simulation
368Paperback(Reprint)
Product Details
ISBN-13: | 9781138071858 |
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Publisher: | Taylor & Francis |
Publication date: | 03/29/2017 |
Series: | Devices, Circuits, and Systems |
Edition description: | Reprint |
Pages: | 368 |
Product dimensions: | 7.00(w) x 10.00(h) x (d) |