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From the Publisher"The spectacular evolution of microelectronics has demonstrated the power of the ‘circuit paradigm’. During the last decade, a broad class of nanoelectronic discrete devices has been proposed and successfully demonstrated; however, there still exists a gap between device physics and nanoelectronic integrated circuit design. This book offers an insight into an original and outstanding effort to bridge the gap between device physics and engineering of nanoelectronic integrated architectures. Original equivalent circuit models of metallic single-electron tunneling (SET) junctions and efficient analysis and synthesis techniques of nanoelectronic circuits are presented. This book in recommended to researchers and students interested in nanoscience and nanotechnology, especially in nanoelectronics."
—Arpad I. Csurgay, University, Hungary and University of Notre Dame, USA
"Single electron devices are promising candidates for next-generation circuits. By clarifying the relationship between models of different levels, this book offers useful knowledge on modeling which makes single electron devices treated the same as conventional transistors during circuit design. The new perspectives involved also help to conceive novel nano-devices. It is a very good reference for researchers who are engaged in this exciting area."
—Ning Deng, Tsinghua University, China