Low Dielectric Constant Materials for IC Applications

by Paul S. Ho (Editor), Jihperng Leu (Editor), Wei William Lee (Editor)

Overview

Low dielectric constant materials are an important component of microelectronic devices. This comprehensive book covers the latest low-dielectric-constant (low-k) materials technology, thin film materials characterization, integration and reliability for back-end interconnects and packaging applications in microelectronics. Highly informative contributions from leading academic and industrial laboratories provide comprehensive information about materials technologies for < 0.18 um process technology. Topics include: Organic dielectric materials, Inorganic dielectric materials, Composite dielectric materials, Metrology and characterization techniques, Integration, Reliability. This volume will be an invaluable resource for professionals, scientists, researchers and graduate students involved in dielectric technology development, materials science, polymer science, and semiconductor devices and processing.

Product Details

ISBN-13:	9783540678199
Publisher:	Springer Berlin Heidelberg
Publication date:	12/16/2002
Series:	Springer Series in Advanced Microelectronics , #9
Edition description:	2003
Pages:	310
Product dimensions:	6.10(w) x 9.25(h) x 0.03(d)

Table of Contents

1 Overview on Low Dielectric Constant Materials for IC Applications.- 1.1 Introduction.- 1.2 Dielectric Constant and Bonding Characteristics.- 1.3 Material Properties and Integration Requirements.- 1.4 Characterization of Low-? Dielectrics.- 1.5 Porous Low-? Materials.- 1.6 Conclusion.- References.- 2 Materials Issues and Characterization of Low-? Dielectric Materials.- 2.1 Introduction.- 2.2 Thin-Film Material Characterization.- 2.3 General Structure-Property Relationships.- 2.4 Fluorinated Polyimide: Effect of Chemical-Structure Modifications on Film Properties.- 2.5 Crosslinked and Thermosetting Materials.- 2.6 Parylene Polymers: Effect of Thermal History on Film Properties.- 2.7 Future Challenges.- References.- 3 Structure and Property Characterization of Low-? Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron Scattering.- 3.1 Introduction.- 3.2 Two-Phase Methodology.- 3.3 Three-Phase Methodology.- 3.4 Films with Ordered Porous Structure.- 3.5 Limits of SANS Characterization Methods.- 3.6 Future Developments.- 3.7 Conclusion.- References.- 4 Vapor Deposition of Low-? Polymeric Dielectrics.- 4.1 Introduction.- 4.2 Vapor-Phase Deposition and Polymerization on Substrates.- 4.3 Parylenes.- 4.4 Polynaphthalene and Its Derivatives.- 4.5 Teflon and Its Derivatives.- 4.6 Vapor-Deposited Polyimides.- 4.7 Prospects for Vapor-Depositable Low-? Polymers.- References.- 5 Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-? Materials.- 5.1 Introduction.- 5.2 FSG Films.- 5.3 a-C:F Films.- References.- 6 Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity.- 6.1 Introduction.- 6.2 Porous Silica.- 6.3 Organosilicates.- 6.4 Porogens.- 6.5 Porous OrganosilicateMatrix Resins.- 6.6 Formation of Nanohybrids.- 6.7 Porous Organosilicates.- 6.8 Characterization of Porous Organosilicates.- 6.9 Conclusion.- References.- 7 Metal/Polymer Interfacial Interactions.- 7.1 Introduction.- 7.2 Experimental Methods.- 7.3 Metallization of Fluoropolymers.- 7.4 Polymers on Metals: Adhesion to Cu.- 7.5 Conclusion.- References.- 8 Diffusion of Metals in Polymers and During Metal/Polymer Interface Formation.- 8.1 Introduction.- 8.2 Thermodynamic Considerations.- 8.3 Effect of Metal-Polymer Interaction on the Mobility of Metal Atoms.- 8.4 Surface Diffusion, Nucleation, and Growth of Metal Films.- 8.5 Diffusion and Aggregation.- 8.6 Atomic Diffusion.- 8.7 Conclusion.- References.- 9 Plasma Etching of Low Dielectric Constant Materials.- 9.1 Introduction.- 9.2 Technological Requirements and Patterning Approaches.- 9.3 Fluorocarbon-Based Etching Processes.- 9.4 Directional Etching of Organic Low-? Materials.- 9.5 Postetch Mask-Stripping and Via-Cleaning Processes.- 9.6 Conclusion.- References.- 10 Integration of SiLK Semiconductor Dielectric.- 10.1 Introduction.- 10.2 SiLK Semiconductor Dielectric.- 10.3 Subtractive Technologies.- 10.4 Damascene Technologies.- 10.5 Cost-of-Ownership.- 10.6 Conclusion.- References.

Editorial Reviews

From the reviews:

Praise for P.S. Ho, J. Leu, and W.W. Lee, Ed's, Low Dielectric Constant Materials for IC Applications

Electrical Insulation Magazine

"Because this volume contains an excellent overview of the current research and issues with low-k dielectric materials for IC applications along with comprehensive practical information, researches, material scientists, and polymer engineers working in the area of microelectronics will find this book a very valuable addition to their library."

"This text addresses the latest advances in low-k materials, thin film characterization, integration into copper interconnection processing, and reliability for microelectronics applications. … Because this volume contains an excellent overview of the current research and issues with low-k dielectric materials for IC applications along with comprehensive practical information, researchers, material scientists, and polymer engineers working in the area of microelectronics will find this book a very valuable addition to their library." (IEEE Electrical Insulation Magazine, Vol. 20 (2), March/April, 2004)

"This book addresses issues on the development, characterization and integration of low dielectric constant (k) materials for advanced on-chip interconnects. … this book illustrates in a comprehensive way the technological challenges brought by the introduction of low-k materials into semiconductor manufacturing. … Being intended to researchers and engineers active in the field of semiconductor processing, it can be used as an introductory book … . Highly appreciated." (Jean - Francois de Marneffe, Physicalia, Vol. 25 (4), 2003)

From the Publisher