Low-Dielectric Constant Materials II: Volume 443

Low-Dielectric Constant Materials II: Volume 443

by Helmuth Treichel, A. C. Jones, A. Lagendijk, K. Uram
     
 

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.See more details below

Overview

The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Product Details

ISBN-13:
9781558993471
Publisher:
Materials Research Society
Publication date:
10/28/1997
Series:
MRS Proceedings Series
Pages:
203

Table of Contents

Preface
Low-Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates3
A Study of Anisotropy of Spin Cast and Vapor-Deposited Polyimide Films Using Internal Reflection Techniques15
Parylene AF-4: A Low [epsilon][subscript R] Material Candidate for ULSI Multilevel Interconnect Applications21
Interconnect Process Technology Using Perfluorocyclobutane (PFCB)35
Fluorocarbon Films From Plasma Polymerization of Hexafluoropropylene and Hydrogen41
Toughened, Inorganic-Organic Hybrid Materials for Microelectronic Application47
Fluorinated Heteroaromatic Polyethers for Low Dielectric Constant/High Temperature Applications59
Thermal Curing Conditions for Low-k Fluorinated Polyimide Film for Use as the Interlayer Dielectric in ULSI71
Mechanical and Dielectric Properties of Low-Permittivity Dielectric Materials79
Evaluation of PTFE Nanoemulsion as a Low-Dielectric Constant Material ILD85
Nanoporous Silica for Low-k Dielectrics91
Deposition and Characterization of Porous Silica Xerogel Films99
Low-k Mesoporous Silica Films Through Template-Based Processing105
Chemical Bonding of Fluorine Atoms in SiOF Alloys: Microscopic Mechanisms for Reductions in the Dielectric Constant Relative to SiO[subscript 2]111
The Thermal Stability of Fluorine-Doped Silicon Oxide Films Formed by ECRCVD With SiF[subscript 4] and O[subscript 2] Gases119
Characterization of PECVD-Deposited Fluorosilicate Glass (FSG) After CMP and Cleaning127
PE-CVD of F-Doped SiO[subscript 2] Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane137
Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film143
Thermal Stability of Flourinated SiO[subscript 2] Films: Effects of Hydration and Film-Substrate Interaction149
Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in ULSI155
Fluorinated Amorphous Carbon Thin Films Grown From C[subscript 4]F[subscript 8] for Multilevel Interconnections of Integrated Circuits165
Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications171
A Comparison of Three Low Dielectric Constant Organic Polymers177
Optimization of AlCu Wiring Delay in Advanced CMOS Technology183
Preliminary Electrical Characterization of Pulsed-Plasma-Enhanced Chemical Vapor-Deposited Teflonlike Thin Films189
Influence of the Cure Process on the Properties of Hydrogen Silsequioxane Spin-on Glass195
Author Index201
Subject Index203

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