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Low-Dielectric Constant Materials II: Volume 443

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Overview

Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.

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Editorial Reviews

Booknews
Reflecting the global significance of the topic to the future of the semiconductor industry, workshop presentations (26 of the 35 are contained here) were given by manufacturers and chemical suppliers, as well as academics from several countries and government laboratories. Diversity is also reflected in the state-of-the-art approaches currently under investigation for the design, implementation, and optimization of low-k dielectric devices: e.g. the evolution of silicon dioxide to fluorinated silicate glass, the use of polymers, diamond-like carbon, and nanoporous silica. Annotation c. by Book News, Inc., Portland, Or.
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Product Details

  • ISBN-13: 9781558993471
  • Publisher: Materials Research Society
  • Publication date: 10/28/1997
  • Series: MRS Proceedings Series
  • Pages: 203

Table of Contents

Preface
Low-Dielectric Constant Materials for IC Intermetal Dielectric Applications: A Status Report on the Leading Candidates 3
A Study of Anisotropy of Spin Cast and Vapor-Deposited Polyimide Films Using Internal Reflection Techniques 15
Parylene AF-4: A Low [epsilon][subscript R] Material Candidate for ULSI Multilevel Interconnect Applications 21
Interconnect Process Technology Using Perfluorocyclobutane (PFCB) 35
Fluorocarbon Films From Plasma Polymerization of Hexafluoropropylene and Hydrogen 41
Toughened, Inorganic-Organic Hybrid Materials for Microelectronic Application 47
Fluorinated Heteroaromatic Polyethers for Low Dielectric Constant/High Temperature Applications 59
Thermal Curing Conditions for Low-k Fluorinated Polyimide Film for Use as the Interlayer Dielectric in ULSI 71
Mechanical and Dielectric Properties of Low-Permittivity Dielectric Materials 79
Evaluation of PTFE Nanoemulsion as a Low-Dielectric Constant Material ILD 85
Nanoporous Silica for Low-k Dielectrics 91
Deposition and Characterization of Porous Silica Xerogel Films 99
Low-k Mesoporous Silica Films Through Template-Based Processing 105
Chemical Bonding of Fluorine Atoms in SiOF Alloys: Microscopic Mechanisms for Reductions in the Dielectric Constant Relative to SiO[subscript 2] 111
The Thermal Stability of Fluorine-Doped Silicon Oxide Films Formed by ECRCVD With SiF[subscript 4] and O[subscript 2] Gases 119
Characterization of PECVD-Deposited Fluorosilicate Glass (FSG) After CMP and Cleaning 127
PE-CVD of F-Doped SiO[subscript 2] Thin Films Using Tetraisocyanatesilane and Tetrafluorosilane 137
Effect of Fluorine Addition to Plasma-Enhanced Chemical Vapor Deposition Silicon Oxide Film 143
Thermal Stability of Flourinated SiO[subscript 2] Films: Effects of Hydration and Film-Substrate Interaction 149
Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in ULSI 155
Fluorinated Amorphous Carbon Thin Films Grown From C[subscript 4]F[subscript 8] for Multilevel Interconnections of Integrated Circuits 165
Poly(Arylene Ethers) as Low Dielectric Constant Materials for ULSI Interconnect Applications 171
A Comparison of Three Low Dielectric Constant Organic Polymers 177
Optimization of AlCu Wiring Delay in Advanced CMOS Technology 183
Preliminary Electrical Characterization of Pulsed-Plasma-Enhanced Chemical Vapor-Deposited Teflonlike Thin Films 189
Influence of the Cure Process on the Properties of Hydrogen Silsequioxane Spin-on Glass 195
Author Index 201
Subject Index 203
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