The modeling and characterization of a SiC Vertical N-type Double Diffused MOSFET is presented in this thesis. The model is a level 3 physics-based model expanding on previous research work on SiC MOSFET models to better fit the new generation of SiC devices and add several new effects. The model includes charge conserving capacitors, a complex channel current equation, and a body diode. It can predict switching behavior including switching losses with high accuracy. It is validated against a 1200 V 30 A Double Diffused MOSFET from Rohm Semiconductor.