Monte Carlo Device Simulation: Full Band and Beyond / Edition 1

Monte Carlo Device Simulation: Full Band and Beyond / Edition 1

by Karl Hess
     
 

ISBN-10: 0792391721

ISBN-13: 9780792391722

Pub. Date: 11/01/2007

Publisher: Springer US

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the

Overview

Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil­ ity related hot-electron effects in MOSFETs cannot be understood satisfac­ torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro­ the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten­ tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

Product Details

ISBN-13:
9780792391722
Publisher:
Springer US
Publication date:
11/01/2007
Series:
Springer International Series in Engineering and Computer Science, #144
Edition description:
1991
Pages:
310
Product dimensions:
6.10(w) x 9.25(h) x 0.03(d)

Table of Contents

1. Numerical Aspects and Implementation of the DAMOCLES Monte Carlo Device Simulation Program.- 2. Scattering Mechanisms for Semiconductor Transport Calculations.- 3. Evaluating Photoexcitation Experiments Using Monte Carlo Simulations.- 4. Extensions of the Monte Carlo Simulation in Semiconductors to Fast Processes.- 5. Theory and Calculation of the Deformation Potential Electron-Phonon Scattering Rates in Semiconductors.- 6. Ensemble Monte Carlo Investigation of Nonlinear Transport Effects in Semiconductor Heterostructure Devices.- 7. Monte Carlo Simulation of Quasi-One-Dimensional Systems.- 8. The Application of Monte Carlo Techniques in Advanced Hydrodynamic Transport Models.- 9. Vectorization of Monte Carlo Algorithms for Semiconductor Simulation.- 10. Full Band Monte Carlo Program for Electrons in Silicon.

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