Nanoelectronics and Information Technology / Edition 1

Nanoelectronics and Information Technology / Edition 1

by Rainer Waser
     
 

ISBN-10: 3527405429

ISBN-13: 9783527405428

Pub. Date: 04/22/2005

Publisher: Wiley

Providing an introduction to electronic materials and device concepts for the major areas of current and future information technology, the value of this book lies in its focus on the underlying principles. Illustrated by contemporary examples, these basic principles will hold, despite the rapid developments in this field, especially emphasizing

Overview

Providing an introduction to electronic materials and device concepts for the major areas of current and future information technology, the value of this book lies in its focus on the underlying principles. Illustrated by contemporary examples, these basic principles will hold, despite the rapid developments in this field, especially emphasizing nanoelectronics.
There is hardly any field where the links between basic science and application are tighter than in nanoelectronics & information technology. As an example, the design of resonant tunneling transistors, single electron devices or molecular electronic structures is simply inconceivable without delving deep into quantum mechanics.
This textbook is primarily aimed at students of physics,
electrical engineering and information technology, as well as material science in their 3rd year and higher. It is equally of interest to professionals wanting a broader overview of this hot topic.

"Nanoelectronics and Information Technology" by Rainer Waser and his colleagues is an outstanding compendium of information about an exciting new field. Owing to its high quality and complete coverage of the many topics in this area, this well referenced book will have a long and very useful life as a primary text for students experienced and new in nanoelectronics. It is a very impressive book." (Richard Siegel)

Product Details

ISBN-13:
9783527405428
Publisher:
Wiley
Publication date:
04/22/2005
Edition description:
2nd, Corrected Edition
Pages:
995
Product dimensions:
8.62(w) x 11.32(h) x 1.84(d)

Table of Contents

FUNDAMENTALS
Dielectric and Optical Properties (S. Hoffmann-Eiffert,IFF,Jülich, Germany)
Ferroelectrics (S. Trolier-McKinstry,Department of Material Science,University Park,USA;
D. Richter,IFF,Jülich,Germany)
Electronic Properties and Quantum Effects (H. Lüth,ISG,Jülich,Germany)
Magnetoelectronics (P.Grünberg,D. Bürgler,IFF,Jülich, Germany)
Organic Molecules (P. Atkins,Oxford,UK;
R. Waser,Aachen, Germany)
Neurons (U. Kaupp,A. Baumann,IBI,Jülich,Germany)
Circuit and System Design (M. Dolle,Infineon,Munich, Germany)
TECHNOLOGY AND ANALYSIS
Deposition Methods (P. Ehrhart,IFF,Jülich,Germany)
Lithography (S. Okazaki,EUV Lithography Laboratory,Atsugi,Japan;J. Moers,ISG,Jülich,Germany)
Material Removing Techniques (S. McClatchie,LAM Research, Fremont,USA;S. Schneider,IFF,Jülich,Germany)
Diffraction and Fluorescence Methods (O. Seeck,IFF,Jülich,Germany)
Scanning Probe Techniques (P. Ebert,K. Szot,IFF,Jülich,Germany;A. Roelofs,Aachen,Germany)
LOGIC DEVICES
Silicon MOSFETs (E. Young,Philips Semiconductor,IMEC,Leuven,Belgium;S. Mantl,ISG,Jülich,Germany;P. Griffin,SNF,Stanford,Germany)
Ferroelectric FETs (H. Ishiwara,Inst. Technology,Tokyo,Japan;H. Kohlstedt,IFF,Jülich,Germany)
Quantum Transport Devices (K. Maezawa,School of Engineering,Nagoya,Japan;A. Förster,ISG,Jülich,Germany)
Single-Electron Devices for Logic Applications (K. Uchida,Advanced LSI Technology Laboratory,Yokohama,Japan)
Superconductor Digital Electronics (M. Siegel,IEGI,Karlsruhe,Germany)
Quantum Computing Using Superconductors (A. Ustinov,Institute of Experimental Physics,Erlangen,Germany)
Carbon Nanotubes for Data Processing (J. Appenzeller,IBM Watson Research Center,Yorktown Heights,USA;E. Joselevich,Weizman Inst.,Rehovot,Israel;W. Hönlein,Infineon,Munich,Germany)
Molecular Electronics (M. Mayor, H. Weber,Institute for Nanotechnology,Karlsruhe,Germany)
RANDOM ACCESS MEMORIES
High-Permittivity Materials for DRAMs (A. Kingon,Department of Material Science,Raleigh,USA;H. Schroeder,IFF,Jülich,Germany)
Ferroelectric RAMs (S. Summerfelt,Texas Instruments,Dallas,USA;U. Böttger,IWE,Aachen,Germany)
Magnetoresistive RAMs (J. Slaughter,M. DeHerrera, Motorola,Tempe,USA;H. Dürr, BESSY,Berlin,Germany)
MASS STORAGE DEVICES
Hard Discs (A. Dietzel,IBM Europe, Mainz,Germany)
Magneto-Optical Discs (K. Röll,Experimental Physics,Kassel,Germany)
Rewriteable DVD based on Phase Change Materials (M. Wuttig,Experimental Physics,Aachen,Germany)
Holographic 3D Memories (M. Imlau,Physics Department,Osnabrück,Germany;
T. Bieringer,Bayer AG,Leverkusen,Germany;
S. G. Odoulov,National Academy of Sciences,Kiev,Ukraina;Th. Woike,Institute of Mineralogy,Cologne,Germany)
AFM-based Mass Storage Concepts (P. Vettiger,M. Despont,U. Dürig,M. A. Lantz,H. E. Rothuizen,G. K. Binnig,IBM Research Laboratory,Rueschlikon,Switzerland)
DATA TRANSMISSION AND INTERFACES
Transmission on Chip and Board Level (M. Mokwa,IWE,Aachen,Germany)
Lightwave Systems (Ch. Buchal,IFF,Jülich,Germany)
Microwave Communication Systems (N. Klein,ISG,Jülich,Germany)
Neuroelectronic Interfacing (P. Fromherz,MPI Biochemistry,München,Germany)
SENSOR ARRAYS AND IMAGING SYSTEMS
Optical 3-D Time-of-Flight Imaging System (B. J. Hosticka,W. Brockherde,R. Jeremias,Institute of Microelectronic Circuits,Duisburg,Germany)
Pyroelectric Detector Arrays for IR Imaging (P. Muralt,EPFL,Lausanne,Switzerland;H. R. Beratan,Raytheon Systems,Texas,USA)
Electronic Noses (D. Kohl,Physics Department,Giessen,Germany)
Tactile Sensors (K. Machida,NTT Microsystem Integration Laboratories,Atsugi,Japan;J. Kent,Elo TouchSystems Inc., Fremont,California,USA)
DISPLAYS
Liquid Crystal Displays (S.-T. Wu, School of Optics,Orlando,USA;R. Zorn,IFF, Jülich,Germany)
Organic LED Displays (S. R. Forrest,Department of Electrical Engineering,Princeton,USA;M. Pfeiffer,IAPP,Dresden,Germany)
Plasma and Field-Emission Displays (P. Bachmann et al. Philips Research,Aachen,Germany)
Electronic Paper (S. Jungk,D. Theiss,Infineon,Munich,Germany)

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