Narrow Gap Semiconductors 1995: Proceedings of the Seventh International Conference on Narrow Gap Semiconductors, Santa Fe, New Mexico, 8-12 January 1995 / Edition 1

by J.L Reno

Overview

Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.

Product Details

ISBN-13:	9780750303415
Publisher:	Taylor & Francis
Publication date:	01/01/1995
Series:	Institute of Physics Conference Series , #144
Pages:	398
Product dimensions:	6.12(w) x 9.19(h) x (d)

About the Author

J. L. Reno

Table of Contents

Preface. Organizing committee. Infrared lasers and emitters. II-VI characterization. IV-VI materials. III-V growth and ordering. II-VI growth. III-V characterization. Infrared photodetectors. Transport devices. Index.

Editorial Reviews

The 92 invited, contributed, and poster papers explore semiconducting materials with a narrow bandgap, which have long been preferred for sources and detectors in the infrared, and are now attracting even more attention because of recent developments made possible by new epitaxal growth techniques. They cover infrared lasers, emitters, and photodetectors; characterization; materials; growth and ordering; and growth. A sampling of topics shows heterostructure and infrared emitters with compressed InAsSb layers, CARS and the Faraday effect in narrow gap HgCdMnTe, magnetotransport in PbTe nipi structures, slab-doping of InSb:Er, and random telegraph noise in HgCdTe photodiodes. No subject index. Annotation c. Book News, Inc., Portland, OR (booknews.com)

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