Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change / Edition 1
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

1127600512
Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change / Edition 1
The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

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Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change / Edition 1

Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change / Edition 1

Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change / Edition 1

Nonvolatile Memory Design: Magnetic, Resistive, and Phase Change / Edition 1

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Overview

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.


Product Details

ISBN-13: 9781439807453
Publisher: Taylor & Francis
Publication date: 12/19/2011
Pages: 208
Product dimensions: 6.20(w) x 9.40(h) x 0.70(d)

Table of Contents

Introduction to Semiconductor Memories. Phase Change Memory (PCM). Toggle-Mode MRAM (TM-MRAM). Spin-Torque Transfer RAM (STT -RAM). Resistive RAM (R-RAM). Memresistor. The Future of Nonvolatile Memory.

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