Table of Contents
Frontmatter — Contents — Review Article — Impurity Precipitation in Alkali Halide Crystals — Original Papers — Effect of Interstitial Loop Formation on Creep Resistance of Aluminium — Precise X-Ray Determination of Small Homogeneous Strains Applied to the Direct Measurement of Piezoelectric Constants — On Some Defects in Thin Low Anisotropy Ferromagnetic Films — On Non-Stationary Pinch in Electron-Hole Plasma — The Role of Adsorption Layers in Exo-Electron Emission from Oxide Surfaces — Experimental Investigation of Generation Spectrum by Three-Level Centres of Two Kinds — Theory of Electron Emission into Dielectrics with Arbitrary Band Structure — Superferromagnetism in Thin Gd and Od-Au Films — Lattice Constants and Phase Transitions in Oriented MnBi Films — Low-Temperature Migration of Silicon through Metal Films Importance of Silicon-Metal Interface — Simultaneous Determination of Volume Trap Concentration and Interface Trap Density from C-Y Characteristics — Rectification at the Metal-Selenium Interface — Ionization Coefficient for Holes in Polycrystalline Selenium — Solution Growth of Homogeneous GaxIn1-xP Alloys — Non-Stoichiometric Vacancy Order in Vanadium Monoxide — Elastic Limit and Peierls Forces in Tellurium Single Crystals — Photon Emission from Sputtered Particles during Ion Bombardment — Effect of the Formation of Stabilized and Movable Domain Walls on the Shape of Hysteresis Loops — Small-Angle Scattering of Neutrons at Single-Domain Precipitations in a Cu-1%Co Single Crystal — Neutron Small-Angle Scattering Study of the Transition from Single- to Multi-Domain Behaviour in Precipitations of Cu-1%Co — Electron Microscope Investigations of the Synthesis of Halophosphate Phosphors — Defects in Epitaxial Gallium Phosphide Layers — The Heat Capacity of Lead from 300 to 850 K: Experimental Data — Rare Gas Diffusion in Alkali Metal Iodides — Space Group Selection Rules. A Comparison of Methods and Application to Fd3m — Diffusion of Nickel in Alloys Based on the Intermetallic Compound Ni3Al(y') — Equivalent Circuit Models in Semiconductor Transport for Thermal, Optical. Auger-Impact, and Tunnelling Recombination-Generation-Trapping Processes — The Dependence of Hole Resonances in Si on the Wave Vector Component along the Direction of Magnetic Induction (I) — The Combination of Auger Spectroscopy and Characteristic Loss Spectroscopy for the Elements Y to Co — Annealing Behavior and Etching Phenomena of Microdefects in Dislocation-Free Float-Zone Silicon — The Effect of Reactor Irradiation on the Electrical Properties of Amorphous Germanium — Dependence of the Intensity of Spontaneous Emission from Electron-Beam-Excited Specimens of Impure GaAs on the Level of Excitation — Voltage Characteristics of Planar Galvanomagnetic Effect in Thin Ferromagnetic Films — The Time Dependence of Current Decay in Indium Antimonide due to the Amplification of Thermal Acoustic Waves — Photoconductivity of Semi-Insulating GaAs(Cr) in High Electric Field — Radiation-Enhanced Diffusion in Metals — Short Notes — Triboluminescence of Silicon Carbide and Other Uncommon Materials — Linear Defects in Sub-Boundaries — On the Maagnetic Transition in ZnxMn1-xFe2O4 Ferrites — Electrical Resistance Peak in Superconducting Lead Films in a Perpendicular Magnetic Field — Infrared Photovoltaic Radiation Detector with Tellurium Single Crystals — Propriétés conductives électriques des couches minces d’oxyde de plomb synthétisé par pulvérisation cathodique réactive — A New Electrical Switching in Liquid Se-Te Alloys — Te-Concentration Dependence of the Emission Intensity of CdS;Te by Radioactive-Tracer Profile Technique — Über Exoemission bei der Dehnung von Aluminium im Ultrahochvakuum — Thermally Stimulated Exoelectron Emission (TSEE) Caused by Pressure Loads on BeO Ceramic — Polymorphism of Cuprous Iodide at High Pressure — Gunn Domains in Bulk GaAs Affected by Surface Conditions — Thermoele
