Optical Properties of III-V Semiconductors: The Influence of Multi-Valley Band Structures

Overview

This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons ...

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Overview

This monograph is concerned with the III-V bulk and low-dimensional semiconductors, with the emphasis on the implications of multi-valley bandstructures for the physical mechanisms essential for opto-electronic devices. The optical response of such semiconductor materials is determined by many-body effects such as screening, gap narrowing, Fermi-edge singularity, electron-hole plasma and liquid formation. Consequently, the discussion of these features reflects such interdependencies with the dynamics of excitons and carriers resulting from intervalley coupling.

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Product Details

  • ISBN-13: 9783642635274
  • Publisher: Springer Berlin Heidelberg
  • Publication date: 4/30/2013
  • Series: Springer Series in Solid-State Sciences , #120
  • Edition description: Softcover reprint of the original 1st ed. 1996
  • Edition number: 1
  • Pages: 199
  • Product dimensions: 6.14 (w) x 9.21 (h) x 0.46 (d)

Table of Contents

1. Introduction to Semiconductor Band Structures.- 1.1 Electronic States in Crystalline Solids.- 1.1.1 The One-Electron Approximation.- 1.1.2 Bloch Waves and the Band Structure Model.- 1.2 Band Structure of III–V Semiconductors.- 1.3 Some General Properties of Multi-Valley Band Structures.- 2. Excitons in Multi-Valley Semiconductors.- 2.1 Basic Properties of Three-Dimensional Excitons.- 2.2 Direct-to-Indirect Crossover in Bulk Semiconductors.- 2.3 Exciton Dynamics in AlxGa1?xAs Near Crossover.- 2.4 Excitons in Low-Dimensional Structures.- 2.5 Direct-to-indirect Transitions in 2D and 1D Structures.- 3. Many-Body Effects in Multi-Valley Scenarios.- 3.1 Introduction to Screening in Highly Excited Semiconductors.- 3.2 Band-Gap Renormalization in Bulk Semiconductors.- 3.2.1 Time-Resolved Electron—Hole Plasma Luminescence.- 3.2.2 The Multi-Valley Model for Band-Gap Renormalization.- 3.2.3 Differential Gap Renormalization.- 3.3 Gap Renormalization in Low-Dimensional Systems.- 3.3.1 Subband Renormalization in Quantum Wells.- 3.3.2 Band-Gap Narrowing in Quantum Wires.- 3.4 Screening in One-Component Plasmas.- 3.5 Electron—Hole Droplet Formation.- 3.5.1 Picosecond Electron—Hole Droplet Formation in Indirect-Gap AlxGa1?xAs.- 3.5.2 Quantum-Confined Electron—Hole Droplets.- 3.6 Optical Nonlinearities at the Direct Gap of Indirect-Gap Semiconductors.- 4. Intervalley Coupling.- 4.1 Theoretical Considerations.- 4.1.1 Transfer Between Real Band States and Scattering Potentials.- 4.1.2 Transitions Involving Virtual Intermediate States.- 4.2 Optical Spectroscopy of Intervalley Coupling.- 4.2.1 Timescales of Carrier Dynamics in Semiconductors.- 4.2.2 Deformation-Potential Scattering.- 4.2.3 Alloy-Disorder-Induced Intervalley Coupling.- 4.2.4 Real-Space Transfer in Type-II Heterostructures.- 4.3 Indirect Stimulated Emission.- 5. Summary and Outlook.- References.

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