Photoelectronic Properties of Semiconductors

by Richard H. Bube

Overview

This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarize the reader with the relatively simple models that are useful in describing these fundamentals. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects, and photoeffects in quantum wells and superlattices.

Product Details

ISBN-13:	9780521406819
Publisher:	Cambridge University Press
Publication date:	05/14/1992
Pages:	340
Product dimensions:	6.14(w) x 9.21(h) x 0.71(d)

Table of Contents

1. Introductory concepts; 2. Photoconductivity; 3. One-center recombination models; 4. The Shockley-Read one-center model; 5. Two-center recombination effects; 6. Recombination mechanisms; 7. Steady-state photoelectronic analysis; 8. Transient photoelectronic analysis; 9. Photoeffects at grain boundaries; 10. Amorphous semiconductors; 11. Photovoltaic effects; 12. Quantum wells and superlattices; Bibliography; Index.

Editorial Reviews

"...recommended as a resource that provides valuable insights for today's graduate students and more seasoned researchers alike. Here they will find a conceptual framework of basic principles to serve as a guide as they venture into new materials or devices or encounter unfamiliar photoconductive phenomena." J. Mort, Optical Engineering

From the Publisher