Physical Chemistry of, in and on Silicon

Overview

This book reviews the physical and chemical properties of silicon and furnishes an up-to-date collection of data. New phases of silicon are described, a new approach is presented to the group III acceptor structure, and detailed information is included on gettering techniques. Silicon processing for device manufacture is briefly discussed.
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Overview

This book reviews the physical and chemical properties of silicon and furnishes an up-to-date collection of data. New phases of silicon are described, a new approach is presented to the group III acceptor structure, and detailed information is included on gettering techniques. Silicon processing for device manufacture is briefly discussed.
Read More Show Less

Product Details

  • ISBN-13: 9783642735066
  • Publisher: Springer Berlin Heidelberg
  • Publication date: 12/16/2011
  • Series: Springer Series in Materials Science , #8
  • Edition description: Softcover reprint of the original 1st ed. 1989
  • Edition number: 1
  • Pages: 122
  • Product dimensions: 6.14 (w) x 9.21 (h) x 0.30 (d)

Table of Contents

1. Silicon.- 1.1 Elemental Silicon.- 1.2 Silicon Metallurgy.- 1.3 Single-Crystal Growth.- 1.4 Mechanical Properties.- 1.4.1 Fracture Limit.- 1.4.2 Plastic Limit.- 2. Silicon Phases.- 2.1 Diamond-Cubic Silicon.- 2.2 Diamond-Hexagonal Silicon.- 2.3 Amorphous Silicon.- 2.3.1 Amorphous 1 (a1).- 2.3.2 Amorphous 0 (a0).- 3. Equilibrium Defects.- 3.1 Vacancies.- 3.2 Self-Interstitials.- 3.3 Vacancy-Self-Interstitial Pair.- 3.4 Stacking Faults.- 4. Impurities.- 4.1 Impurity Content.- 4.2 Oxygen.- 4.2.1 Thermal Donors.- 4.2.2 The New Thermal Donor.- 4.3 Oxygen Precipitates.- 5. Dopants.- 5.1 The Standard Theory.- 5.1.1 Electronic Properties.- 5.1.2 Equilibrium Properties.- 5.1.3 Transport Properties.- 5.2 Group V Donors.- 5.3 Group III Acceptors.- 5.3.1 Group III Acceptors as Shallow Centres.- 5.3.2 Group III Acceptors as Deep Centres.- 5.4 Generation-Recombination Phenomena.- 6. Defect-Impurity Interactions.- 6.1 Defect Influence on Impurities.- 6.2 Impurity Influence on Defects.- 6.3 Impurity-Impurity Interactions.- 7. The High Density Limit.- 7.1 Transition Metals.- 7.2 Substitutional Impurities.- 7.2.1 Clusters.- 7.2.2 Precipitation.- 7.3 General Correlations.- 7.3.1 Solubility and Segregation.- 7.3.2 Strain Entropy.- 8. Surfaces and Interfaces.- 8.1 Amorphous SÍO2.- 8.2 The Si-SiO2 Interface.- 8.3 Oxidation Kinetics.- 8.4 Surface Reconstructibility.- 9. Gettering.- 9.1 External Gettering.- 9.2 Internal Gettering.- 9.3 Heavy-Metal Gettering.- 9.4 Gettering and Device Processing Architecture.- 10.Device Processing.- 10.1 The MOS Structure.- 10.2 MOS Technology.- 10.3 A Look to the Future.- References.- Acronyms and Abbreviations.
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