Process Physics and Modeling in Semiconductor Devices: 4th International Symposium

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Product Details

  • ISBN-13: 9781566771542
  • Publisher: Electrochemical Society, The
  • Publication date: 4/1/1996
  • Series: Proceedings Series
  • Pages: 528

Table of Contents

TCAD - The Semiconductor Industry Roadmap and a Path to the Future 3
Computational Issues for Process Modeling 18
Models and Parameters for the Coupled Diffusion of Dopants and Point Defects in Silicon 27
Kinetic Model for Arsenic Deactivation in Silicon 37
Dynamic Segregation of Arsenic in Polycrystalline Silicon 44
Nitridation Enhanced Diffusion of Antimony in Bulk and Silicon-on-Insulator Material 54
Diffusion of Si Self-Interstitials in the Presence of Carbon-Related Interstitial Traps 64
Modeling of Boron Diffusion After Shallow Implants Using BF[subscript 2] 75
Dopants (P, As, and B) in Poly-Si/TiSi[subscript 2] System: Redistribution and Activation 85
Two Stream Model for Dopant Diffusion in Polysilicon Incorporating Effects of Grain Growth 92
Physical Modeling of Transient Enhanced Diffusion in Silicon 101
Evidence of Two Sources of Interstitials for TED in Boron Implanted Silicon 116
Modeling and Calibration of TED 127
Transient Enhanced Diffusion for Implanted Doses Exceeding the Threshold Dose for Amorphization and for Implants into Preamorphized Substrates 135
Modeling the Transient Diffusion Behavior of Beryllium in Gallium Arsenide and the Effect of Encapsulant Material on Non-Equilibrium Point Defect Populations 142
Post-Implant Anneal: Fundamental Differences in Dopant Diffusion and Activation Due to Rapid Thermal Annealing/Furnace Annealing 149
Modeling of Transient Enhanced Diffusion Based on Evolution of {311} Defects 155
Escape of Phosphorus from Silicon During Rapid Thermal Annealing 164
Modeling of High Dose Implanted Boron Diffusion During RTA 172
Process Simulation of Dopant Atom Diffusion in SiO[subscript 2] 179
Interdiffusion Mechanisms in Coherently Strained SiGe Multilayers 195
An Explanation of Trap-Limited Self-Interstitial Diffusion and Enhanced Boron Clustering in Boron Doped Silicon Super Lattices 210
Modeling of Diffusion and Ion Implantation in Mercury Cadium Telluride: A Comparison to Transient Enhanced Diffusion in Silicon 216
Three-Dimensional Oxidation Simulation with Elasto-Viscoplastic Model 228
Atomic Transport in Compound Semiconductors 237
Theory and Computer Simulation of Microstructure Evolution in Polycrystalline Metallic Thin Films 249
Structures and Stabilities of Boron Clusters in Silicon 261
Modeling Defect-Cluster Formation in Crystalline Silicon 273
Stress of ECR Plasma CVD Si[subscript 3]N[subscript 4] Films on FZ-Si 288
The Stability of SiGe Strained Layers on Small Area Trench Isolated Silicon Islands 298
The Influence of Carbon on the Effective Diffusivities of Intrinsic Point Defects in Silicon 309
Properties of Silicon Point Defects as Revealed by Lithium Ion Drifting 324
The Effect of TiSi[subscript 2] Film Thickness and Growth on the Point Defect Perturbance in Si 337
Estimation of Point Defect Fundamental Properties Using SOI Structures and Devices 348
Electrically Inactive PolyöSilicon Grain Boundaries 359
(311) Defect Formation and Evolution for Si and B Implants 374
Role of Dose, Dose Rate, and Anneal Temperature on End-of-Range Dislocation Loops 379
Atomic-Scale Simulation of Defect-Induced Amorphization of Crystalline Silicon 387
Modeling Interactions of Point Defects with Precipitates Using the Reduced Precipitation Model 398
Effect of Stress on Point and Extended Defects in Silicon 407
Modeling of SiO[subscript 2] Stress Relaxation and Stress Dependent Oxidation 417
Atomic Scale Simulations of Arsenic Ion Implantation and Annealing in Silicon 429
Ion Implant Modeling for ULSI CMOS Technology Development and Manufacturing 438
Modeling of Damage Accumulation During Ion Implantation into Single-Crystalline Silicon 453
A Two-Dimensional, Accurate and Computationally Efficient Model for Boron Implantation through Oxide Layers into Silicon 468
An Accurate Monte Carlo Binary Collision Model for BF[subscript 2] Implants into (100) Single-Crystal Silicon 481
Three-Dimensional Monte Carlo Simulation of Implanted Boron and Damage Distribution in Crystalline Silicon Considering Mask Structure 496
Net Point Defect Concentrations After Ion Implantation in Silicon 509
Author Index 523
Subject Index 525
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