Process Physics and Modeling in Semiconductor Technology: 5th International Symposium

Process Physics and Modeling in Semiconductor Technology: 5th International Symposium

by C. S. Murthy
     
 

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Booknews
Contains papers from a May 1999 symposium, addressing topics in understanding and modeling of ion implantation and damage annealing, diffusion, segregation and aggregation of dopants and point defects, and back-end processing. Papers on ion implantation consider both fundamental and computationally efficient models, with emphasis on the evolution of damage during implantation and initial annealing. In the dopant/defect diffusion area, papers examine questions on transient enhanced diffusion, and interactions of dopants with SiO2 films. Papers on back-end processing consider film growth and electromigration. McMurthy works at IBM Semiconductor R&D Center. Annotation c. Book News, Inc., Portland, OR (booknews.com)

Product Details

ISBN-13:
9781566772242
Publisher:
Electrochemical Society, The
Publication date:
04/01/1999
Pages:
230

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