| Preface | xi |
Chapter 1 | The Crystal Structure of Solids | 1 |
1.1 | Semiconductor Materials | 1 |
1.2 | Types of Solids | 2 |
1.3 | Space Lattices | 3 |
1.4 | Atomic Bonding | 11 |
1.5 | Imperfections and Impurities in Solids | 13 |
1.6 | Growth of Semiconductor Materials | 16 |
1.7 | Summary | 19 |
Chapter 2 | Introduction to Quantum Mechanics | 24 |
2.1 | Principles of Quantum Mechanics | 25 |
2.2 | Schrodinger's Wave Equation | 30 |
2.3 | Applications of Schrodinger's Wave Equation | 33 |
2.4 | Extensions of the Wave Theory to Atoms | 45 |
2.5 | Summary | 50 |
Chapter 3 | Introduction to the Quantum Theory of Solids | 56 |
3.1 | Allowed and Forbidden Energy Bands | 57 |
3.2 | Electrical Conduction in Solids | 70 |
3.3 | Extension to Three Dimensions | 80 |
3.4 | Density of States Function | 83 |
3.5 | Statistical Mechanics | 88 |
3.6 | Summary | 96 |
Chapter 4 | The Semiconductor in Equilibrium | 103 |
4.1 | Charge Carriers in Semiconductors | 104 |
4.2 | Dopant Atoms and Energy Levels | 115 |
4.3 | The Extrinsic Semiconductor | 120 |
4.4 | Statistics of Donors and Acceptors | 128 |
4.5 | Charge Neutrality | 132 |
4.6 | Position of Fermi Energy Level | 139 |
4.7 | Summary | 145 |
Chapter 5 | Carrier Transport Phenomena | 154 |
5.1 | Carrier Drift | 154 |
5.2 | Carrier Diffusion | 169 |
5.3 | Graded Impurity Distribution | 173 |
5.4 | The Hall Effect | 177 |
5.5 | Summary | 180 |
Chapter 6 | Nonequilibrium Excess Carriers in Semiconductors | 189 |
6.1 | Carrier Generation and Recombination | 190 |
6.2 | Characteristics of Excess Carriers | 194 |
6.3 | Ambipolar Transport | 197 |
6.4 | Quasi-Fermi Energy Levels | 216 |
6.5 | Excess-Carrier Lifetime | 218 |
6.6 | Surface Effects | 224 |
6.7 | Summary | 229 |
Chapter 7 | The pn Junction | 238 |
7.1 | Basic Structure of the pn Junction | 238 |
7.2 | Zero Applied Bias | 240 |
7.3 | Reverse Applied Bias | 247 |
7.4 | Nonuniformly Doped Junctions | 255 |
7.5 | Summary | 260 |
Chapter 8 | The pn Junction Diode | 268 |
8.1 | pn Junction Current | 269 |
8.2 | Small-Signal Model of the pn Junction | 286 |
8.3 | Generation-Recombination Currents | 297 |
8.4 | Junction Breakdown | 305 |
8.5 | Charge Storage and Diode Transients | 309 |
8.6 | The Tunnel Diode | 313 |
8.7 | Summary | 316 |
Chapter 9 | Metal-Semiconductor and Semiconductor Heterojunctions | 326 |
9.1 | The Schottky Barrier Diode | 326 |
9.2 | Metal-Semiconductor Ohmic Contacts | 344 |
9.3 | Heterojunctions | 349 |
9.4 | Summary | 359 |
Chapter 10 | The Bipolar Transistor | 367 |
10.1 | The Bipolar Transistor Action | 368 |
10.2 | Minority Carrier Distribution | 377 |
10.3 | Low-Frequency Common-Base Current Gain | 385 |
10.4 | Nonideal Effects | 397 |
10.5 | Equivalent Circuit Models | 413 |
10.6 | Frequency Limitations | 422 |
10.7 | Large-Signal Switching | 427 |
10.8 | Other Bipolar Transistor Structures | 430 |
10.9 | Summary | 435 |
Chapter 11 | Fundamentals of the Metal-Oxide-Semiconductor Field-Effect Transistor | 449 |
11.1 | The Two-Terminal MOS Structure | 450 |
11.2 | Capacitance-Voltage Characteristics | 474 |
11.3 | The Basic MOSFET Operation | 483 |
11.4 | Frequency Limitations | 502 |
11.5 | The CMOS Technology | 507 |
11.6 | Summary | 509 |
Chapter 12 | Metal-Oxide-Semiconductor Field-Effect Transistor: Additional Concepts | 523 |
12.1 | Nonideal Effects | 524 |
12.2 | MOSFET Scaling | 534 |
12.3 | Threshold Voltage Modifications | 537 |
12.4 | Additional Electrical Characteristics | 543 |
12.5 | Radiation and Hot-Electron Effects | 554 |
12.6 | Summary | 561 |
Chapter 13 | The Junction Field-Effect Transistor | 570 |
13.1 | JFET Concepts | 571 |
13.2 | The Device Characteristics | 577 |
13.3 | Nonideal Effects | 593 |
13.4 | Equivalent Circuit and Frequency Limitations | 598 |
13.5 | High Electron Mobility Transistor | 602 |
13.6 | Summary | 609 |
Chapter 14 | Optical Devices | 617 |
14.1 | Optical Absorption | 618 |
14.2 | Solar Cells | 623 |
14.3 | Photodetectors | 631 |
14.4 | Photoluminescence and Electroluminescence | 642 |
14.5 | Light Emitting Diodes | 647 |
14.6 | Laser Diodes | 653 |
14.7 | Summary | 661 |
Chapter 15 | Semiconductor Power Devices | 668 |
15.1 | Power Bipolar Transistors | 668 |
15.2 | Power MOSFETs | 676 |
15.3 | Heat Sinks and Junction Temperature | 683 |
15.4 | The Thyristor | 686 |
15.5 | Summary | 696 |
Appendix A | Selected List of Symbols | 703 |
Appendix B | System of Units, Conversion Factors, and General Constants | 711 |
Appendix C | The Periodic Table | 715 |
Appendix D | The Error Function | 717 |
Appendix E | "Derivation" of Schrodinger's Wave Equation | 719 |
Appendix F | Unit of Energy--The Electron-Volt | 721 |
Appendix G | Answers to Selected Problems | 723 |
| Index | 731 |