Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure
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Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications
Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure
86.99 In Stock
Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications

Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications

Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications

Semiconductor Quantum Well Intermixing: Material Properties and Optoelectronic Applications

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Overview

Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure

Product Details

ISBN-13: 9781040190289
Publisher: CRC Press
Publication date: 01/18/2000
Sold by: Barnes & Noble
Format: eBook
Pages: 695
File size: 26 MB
Note: This product may take a few minutes to download.

About the Author

Lie, J. T.

Table of Contents

1. Theories of Band Structure and Optical Properties of Interdiffused Wuantum Wells K.S. Chan and E.H. Li 2. Interdiffusion Mechanisms in III-V Materials W.P. Gillin 3. Interdiffusion in Lattice-Matched Quantum Wells and Self-Formed Quantum Dots Composed of III-V Semiconductors K. Mukai 4. Interdiffusion in Strained Layer In^OxGa^O1-x As/GaAs Heterostructures F. Iikawa 5. Strain in Interdiffused In^O0.53Ga^O0.47As/InP Quantum Wells J. Micallef 6. Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation E.S. Koteles 7. Control of Layer Intermixing by Impurities and Defects D. Sun and P. Mei 8. Quantum Wells Intermixing by Ion Implantation and Anodic Oxidation H.H. Tan, S. Yuan, M. Gal and C. Jagadish 9. Impurity-Free Vacancy Disordering of GaAs/AlGaAs Quantum Well Structures: Processing and Devices J.H. Marsh and A.C. Bryce 10. Selective Interdiffusion of GaAs/AlGaAs Quantum Wells Through SiO^O2 Encapsulation - Comparison with the Ion Implantation Approach A. Pepin and C. Vieu 11. Dependence of Dielectric Cap Quantum Well Disordering on the Characteristics of Dielectric Capping Film W.J. Choi 12. Selective Area Disordering of Quantum Wells for Integrated All-Optical Devices P. Li Kam Wa 13. Polarization-Dependent Refractive-Index Change Induced by Superlattice Disordering and Its Applications Y. Suzuki 14. Broadspectrum InGaAs/InP Quantum Well Infrared Photodetector Via Quantum Well Intermixing D. Sengupta, Y.-C. Chang and G. Stillman 15. Diffused Quantum Well Modulators W.C.H. Choy and E.H. Li 16. Analysis and Design of Semiconductor Lasers Using Diffused Quantum Wells Structure S.F. Yu and C.W. Lo Index
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