Semiconductor Quantum Wells And Superlattices For Long-Wavelength Infrared Detectors

Overview

This book helps you understand the basic properties of semiconductor quantum wells and superlattices and describes how they can be utilized for long-wavelength infrared detectors and imaging arrays. Includes 111 illustrations and 237 equations.
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Overview

This book helps you understand the basic properties of semiconductor quantum wells and superlattices and describes how they can be utilized for long-wavelength infrared detectors and imaging arrays. Includes 111 illustrations and 237 equations.
Read More Show Less

Product Details

Table of Contents

Foreword
Preface
Ch. 1 Introduction to Long-Wavelength Infrared Quantum Detectors 1
1.1 Background 1
1.2 Quantum Detectors Based on Semiconductor Quantum Wells and Superlattices 2
1.3 GaAs/AlGa[subscript 1-x]As Multiple Quantum Wells 8
1.4 InAs/Ga[subscript 1-x]In[subscript x]Sb Strained-Layer Superlattices 11
1.5 Si/Si[subscript 1-x]Ge[subscript x] Multiple Quantum Wells 13
Ch. 2 Theoretical Modeling of the Intersubband Transitions in III-V Semiconductor Multiple Quantum Wells 19
2.2 The Effective Mass Equation 20
2.3 Conduction Band States in Quantum Wells 22
2.4 The Finite Difference Method 25
2.5 Valence Band States 28
2.6 Effect of Strain on the Conduction and Valence Bands of Quantum Wells 31
2.7 Absorption Coefficient for the Conduction Intersubband Transition in GaAs/AlGaAs Multiple Quantum Wells 37
Ch. 3 Long-Wavelength Infrared Photodetectors Based on Intersubband Transitions in III-V Semiconductor Quantum Wells 55
3.2 Fundamentals of Infrared Detection for Staring Applications 59
3.3 The Development of GaAs/AlGaAs Multiple Quantum Well Photoconductive Detectors 62
3.4 Performance Models for GaAs/AlGaAs Multiple Quantum Well Photoconductive Detectors 77
3.5 Device Optimization for Applications 95
Ch. 4 Far-Infrared Materials Based on InAs/GalnSb Type II, Strained-Layer Superlattices 109
4.2 Electronic Structure Theory of Semiconductor Superlattices 113
4.3 InAs/Ga[subscript 1-x]In[subscript x]Sb Type II Strained-Layer Superlattices 122
4.4 Experimental Situation 131
Ch. 5 Infrared Detectors Using SiGe/Si Quantum Well Structures 139
5.2 Growth of SiGe Strained Layers 141
5.3 Band Structures and Properties of SiGe Layers Under Strain 144
5.4 Physics of Intersubband Transitions 152
5.5 p-Type Intersubband Transition 180
5.6 p-Type Intersubband and Free Carrier Detectors 194
5.7 Prospective 201
Ch. 6 Type III Superlattices for Long-Wavelength Infrared Detectors: The HgTe/CdTe System 207
6.2 Band Structure Calculations 208
6.3 Basic Materials Properties 213
6.4 Properties Directly Affecting Detector Performance 235
6.5 HgTe/CdTe Detector Fabrication 247
Index 261
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