Silicon Carbide: Materials, Processing & Devices

by Chuan Feng Zhe

Overview

This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

Product Details

ISBN-13:	9781591690238
Publisher:	Taylor & Francis
Publication date:	10/30/2003
Series:	Optoelectronic Properties of Semiconductors and Superlattices Ser. , #20
Pages:	416
Product dimensions:	6.00(w) x 9.00(h) x 1.10(d)

About the Author

Dr. Zhe Chuan Feng received his Ph.D. from the University of Pittsburgh. He has worked both within academia and industry on semiconductor growth, process, characterization, semiconductor devices, and lasers. He is currently a Senior Research Scientist at the School of Electrical & Computer Engineering at the Georgia Institute of Technology, focusing on widegap III-Nitrides, SiC and other compound semiconductors.
Dr. Jian H. Zhao received his Ph.D. in Electrical Engineering from Carnegie Mellon University in 1988 and joined Rutgers University in the same year. He is Professor and Director of SiCLAB and his research results have been summarized in more than 110 refereed papers and over 140 conference papers and presentations, as well as four book chapters and a book titled Optical Filter Design and Analysis: A Signal Processing Approach. He holds five patents.

Table of Contents

Preface

Chapter 1 Epitaxial growth of high-quality silicon carbide - Fundamentals and recent progress -
— T. Kimoto and H. Matsunami* (Kyoto University)
(1) Introduction
(2) Step-controlled Epitaxy of SiC
2.1 Chemical vapor deposition
2.2 Step-controlled epitaxy
2.3 Surface morphology
(3) Growth mechanism of step-controlled epitaxy
3.1 Rate-determining process
3.2 Off-angle dependence of growth rate
3.3 Temperature dependence of growth rate
3.4 Prediction of step-flow growth condition
3.4.1 Surface diffusion model
3.4.2 Desorption flux
3.4.3 Critical supersaturation ratio
3.4.4 Critical growth conditions
3.4.5 Surface diffusion length
3.4.6 Prediction of growth mode
(4) Behaviors of steps in SiC epitaxy
4.1 Nucleation and step motion
4.2 Step bunching
(5) Characterization of epitaxial layers
5.1 Structural characterization
5.2 Optical characterization
5.3 Electrical characterization
(6) Doping of impurities
6.1 Donor doping
6.2 Acceptor doping
(7) Recent progress
7.1 Practical epitaxial growth
7.2 Epitaxial growth on (11-20)
(8) Concludions
References

Chapter 2 Surface characterization of 6H-SiC reconstructions
— Kian-Ping LOH, Eng-Soon TOK, and Andrew T. S. WEE*
(National University of Singapore)
1. INTRODUCTION
2. Sample preparation methods for characterization of surface reconstruction
3. Reflection High Energy Electron Diffraction (RHEED)
3.1 RHEED system set-up
3.2 RHEED analysis of surface reconstruction on 6H-SiC (0001)
3.3 6H-SiC (0001)-(1´1) reconstruction
3.4 6H-SiC (0001)-(3´3) reconstruction
3.5 6H-SiC(0001)-(6×6) reconstruction
3.6 6H-SiC(0001)-(Ö3´Ö3R ) reconstruction
3.7 1´1 graphite-R on 1´1 SiC
3.8 RHEED Rocking beam analysis
4. Scanning Tunneling Microscopy (STM)
4.1 Surface Morphological Evolution of 6H-SiC(0001)
4.2 6H-SiC (0001)-(3&