Silicon Nitride and Silicon Dioxide Thin Insulating Films: Proceedings of the International Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films (6th: 2001: Washington, D. C.)

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The two dozen papers generally discuss either processing or characterizing, but more specifically the surface and interface investigation of ion-beam-deposited silicon oxide thin film, charging damage during plasma-enhanced dielectric deposition, compound formation and the segregation of impurities during the low-energy ion irradiation of silicon, silicon oxynitride as a versatile material for integrated optics applications, and other topics.

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Overview

The two dozen papers generally discuss either processing or characterizing, but more specifically the surface and interface investigation of ion-beam-deposited silicon oxide thin film, charging damage during plasma-enhanced dielectric deposition, compound formation and the segregation of impurities during the low-energy ion irradiation of silicon, silicon oxynitride as a versatile material for integrated optics applications, and other topics.

Annotation c. Book News, Inc., Portland, OR (booknews.com)

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Product Details

  • ISBN-13: 9781566773133
  • Publisher: Electrochemical Society, The
  • Publication date: 1/1/2001
  • Pages: 286

Table of Contents

Preface
Organizers
A Review of Oxide Wearout, Breakdown, and Reliability 3
Surface And Interface Study Of Ion Beam Deposited Silicon oxide Thin films 44
Study of Inversion Layer Hole Mobility in p-MOSFET During High-field Stressing 52
Two Limiting Thinnesses Of The Ultrathin Gate Oxide 60
The Connection Between oxide leakage currents and Si/SIO[subscript 2] Interface Trap Generation 74
Charging Damage During Plasma Enhanced Dielectric Deposition 80
Kinetics and Mechanisms of Organic Contaminant Interactions at Silicon Surfaces in High Temperature Processes 88
Remote Plasma Deposited Gate Dielectrics on Si and SiGe MOSFETS 95
Rapid Thermal Processes of High Permittivity Films on Silicon for ULSI Gate Dielectrics Applications 109
Processing of Thick Thermal Gate Oxides in Trenchs 127
Electrical Properties of SiO[subscript 2]-Films Prepared by VUV Chemical Vapor Deposition 134
SiO[subscript 2] Film Deposition on Different Substrate Materiais by Photo- CVD Using Vacuum Ultraviolet Radiation 140
Low Energy Ion Irradiation of Silicon: Compound Formation and Segregation of Impurities 147
Characteristics of Silicon Oxynitrides Made By ECR Plasmas 156
Radiation Hardening of Oxynitrides Formed By Low Nitrogen Implantation into Silicon Prior to Oxidation 163
Material and Process Considerations of Ultra thin Silicon (Oxy) Nitride Films Grown on Silicon and SiO[subscript 2] Surfaces 174
Silicon OxyNitride: A Versatile Material for Integrated Optics Application 191
Characterization of Silicon Oxynitride Thin Films Deposited By ECR-PECVD 206
Characterization of Low- Temperature Magnetoplasma-Grown Si Oxynitride and Si Oxide 214
Advances in Single Wafer Chemical Deposition of Oxide and Nitride films 227
High Integrity Direct Oxidation/Nitridation at Low Temperatures Using Radicals 241
Thermally Induced Stress Changes in High Density Plasma Deposited Silicon Nitride Films 253
Effect of Oxygen in Deposited Ultra Thin Silicon Nitride Film on Electrical Properties 264
Influence of Low- energy argon Ion Bombardment and Vacuum Annealing on the Silicon Nitride Surface Properties 274
Authors Index 282
Subject Index 284
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