Silicon Nitride and Silicon Dioxide Thin Insulating Films: 4th International Symposium

Available through our Marketplace sellers.
Other sellers (Hardcover)
  • All (3) from $78.00   
  • New (1) from $93.60   
  • Used (2) from $78.00   
Close
Sort by
Page 1 of 1
Showing All
Note: Marketplace items are not eligible for any BN.com coupons and promotions
$93.60
Seller since 2008

Feedback rating:

(2897)

Condition:

New — never opened or used in original packaging.

Like New — packaging may have been opened. A "Like New" item is suitable to give as a gift.

Very Good — may have minor signs of wear on packaging but item works perfectly and has no damage.

Good — item is in good condition but packaging may have signs of shelf wear/aging or torn packaging. All specific defects should be noted in the Comments section associated with each item.

Acceptable — item is in working order but may show signs of wear such as scratches or torn packaging. All specific defects should be noted in the Comments section associated with each item.

Used — An item that has been opened and may show signs of wear. All specific defects should be noted in the Comments section associated with each item.

Refurbished — A used item that has been renewed or updated and verified to be in proper working condition. Not necessarily completed by the original manufacturer.

New

Ships from: Simi Valley, CA

Usually ships in 1-2 business days

  • Canadian
  • International
  • Standard, 48 States
  • Standard (AK, HI)
  • Express, 48 States
  • Express (AK, HI)
Page 1 of 1
Showing All
Close
Sort by
Sending request ...

Product Details

  • ISBN-13: 9781566771375
  • Publisher: Electrochemical Society, Incorporated
  • Publication date: 8/28/1997
  • Series: Proceedings Series
  • Pages: 588

Table of Contents

Preface
Organizers
Dependence of Oxide Electric Field and Gate Electrode Work Function on the Reliability of Thin MOS Gate Oxides 3
A Comprehensive Physical Model of Oxide Wearout and Breakdown Explaining the Fluence, Time, Field, and Thickness Dependence of Trap Generation 11
Effect of Aging on Stress in Silicon Nitride Films by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition Technique 26
Improved Reliability of Silicon Dioxide in MOS Devices by Nitrogen Pileup at Poly -Si / Silicon Dioxide Interface 38
The effects of Metallic Contamination on Gate Oxide Integrity-Ti, W 45
Oxide Leakage Currents and Oxygen Deficient Silicon 50
New Advances on the Characterization of the Si-SiO[subscript 2] Interface 59
Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source 75
Properties of N- and P-Channel MOSFETs with Ultrathin RTCVD Oxynitride Gate Dielectrics 90
Theory of Dangling Orbital Defects at the [100] Si-SiO[subscript 2] Interface 109
Contribution of P[subscript b1] Centers to Midgap Interface Trap Density in Oxidized (100) Silicon Wafers 120
Characterization of Anodic Si Oxide Thin Films with Non Invasive Techniques 128
Characterization of Hole Trapping in Ultra-Thin Chemical Oxides by Means of X-Ray Photoelectron Spectroscopy Time-Dependent Measurements 134
Variation in the Silicon Oxynitridation Process Along a Furnace Length 143
Characterization of Gate Dielectric Layers with Secondary Ion Mass Spectrometry (SIMS) 155
Silicon-Oxynitride Layers For Optical Waveguide Applications 169
Nitrogen Incorporation Near Top and Bottom Surfaces of Ultra-Thin Silicon Oxynitrides 185
X-Ray Photoelectron Studies of Oxynitrides for Gate Applications 193
Development of Silicon Nitride Films for Gate Dielectric Applications 207
Diffusion of Iron Contamination in Silicon Dioxide 219
Novel Uses of Silicon Dioxide in Deep-Submicron Device Fabrication 225
On the Silicon Suboxide Layer Above an Atomically Abrupt Silicon Oxide/Si(100) Interface in N[subscript 2]O Furnace Oxidation 240
Organic Contamination on Si Wafers in Fab Environments and its Effects on Gate Oxide Integrity 250
A Study on the Angular Dependence of the Etch and the Redeposition Rates in Plasma Etching Using a Faraday Cage 260
Gate Oxides on Deuterium Implanted Silicon Substrate 270
Authors Index 279
Subject Index 281
Read More Show Less

Customer Reviews

Be the first to write a review
( 0 )
Rating Distribution

5 Star

(0)

4 Star

(0)

3 Star

(0)

2 Star

(0)

1 Star

(0)

Your Rating:

Your Name: Create a Pen Name or

Barnes & Noble.com Review Rules

Our reader reviews allow you to share your comments on titles you liked, or didn't, with others. By submitting an online review, you are representing to Barnes & Noble.com that all information contained in your review is original and accurate in all respects, and that the submission of such content by you and the posting of such content by Barnes & Noble.com does not and will not violate the rights of any third party. Please follow the rules below to help ensure that your review can be posted.

Reviews by Our Customers Under the Age of 13

We highly value and respect everyone's opinion concerning the titles we offer. However, we cannot allow persons under the age of 13 to have accounts at BN.com or to post customer reviews. Please see our Terms of Use for more details.

What to exclude from your review:

Please do not write about reviews, commentary, or information posted on the product page. If you see any errors in the information on the product page, please send us an email.

Reviews should not contain any of the following:

  • - HTML tags, profanity, obscenities, vulgarities, or comments that defame anyone
  • - Time-sensitive information such as tour dates, signings, lectures, etc.
  • - Single-word reviews. Other people will read your review to discover why you liked or didn't like the title. Be descriptive.
  • - Comments focusing on the author or that may ruin the ending for others
  • - Phone numbers, addresses, URLs
  • - Pricing and availability information or alternative ordering information
  • - Advertisements or commercial solicitation

Reminder:

  • - By submitting a review, you grant to Barnes & Noble.com and its sublicensees the royalty-free, perpetual, irrevocable right and license to use the review in accordance with the Barnes & Noble.com Terms of Use.
  • - Barnes & Noble.com reserves the right not to post any review -- particularly those that do not follow the terms and conditions of these Rules. Barnes & Noble.com also reserves the right to remove any review at any time without notice.
  • - See Terms of Use for other conditions and disclaimers.
Search for Products You'd Like to Recommend

Recommend other products that relate to your review. Just search for them below and share!

Create a Pen Name

Your Pen Name is your unique identity on BN.com. It will appear on the reviews you write and other website activities. Your Pen Name cannot be edited, changed or deleted once submitted.

 
Your Pen Name can be any combination of alphanumeric characters (plus - and _), and must be at least two characters long.

Continue Anonymously

    If you find inappropriate content, please report it to Barnes & Noble
    Why is this product inappropriate?
    Comments (optional)