Silicon Nitride and Silicon Dioxide Thin Insulating Films: 4th International Symposium

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Product Details

  • ISBN-13: 9781566771375
  • Publisher: Electrochemical Society, Incorporated
  • Publication date: 8/28/1997
  • Series: Proceedings Series
  • Pages: 588

Table of Contents

Dependence of Oxide Electric Field and Gate Electrode Work Function on the Reliability of Thin MOS Gate Oxides 3
A Comprehensive Physical Model of Oxide Wearout and Breakdown Explaining the Fluence, Time, Field, and Thickness Dependence of Trap Generation 11
Effect of Aging on Stress in Silicon Nitride Films by Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition Technique 26
Improved Reliability of Silicon Dioxide in MOS Devices by Nitrogen Pileup at Poly -Si / Silicon Dioxide Interface 38
The effects of Metallic Contamination on Gate Oxide Integrity-Ti, W 45
Oxide Leakage Currents and Oxygen Deficient Silicon 50
New Advances on the Characterization of the Si-SiO[subscript 2] Interface 59
Properties of Gate-Quality Silicon Nitride and Oxynitride Dielectrics Deposited Using an Electron Cyclotron-Resonance Plasma Source 75
Properties of N- and P-Channel MOSFETs with Ultrathin RTCVD Oxynitride Gate Dielectrics 90
Theory of Dangling Orbital Defects at the [100] Si-SiO[subscript 2] Interface 109
Contribution of P[subscript b1] Centers to Midgap Interface Trap Density in Oxidized (100) Silicon Wafers 120
Characterization of Anodic Si Oxide Thin Films with Non Invasive Techniques 128
Characterization of Hole Trapping in Ultra-Thin Chemical Oxides by Means of X-Ray Photoelectron Spectroscopy Time-Dependent Measurements 134
Variation in the Silicon Oxynitridation Process Along a Furnace Length 143
Characterization of Gate Dielectric Layers with Secondary Ion Mass Spectrometry (SIMS) 155
Silicon-Oxynitride Layers For Optical Waveguide Applications 169
Nitrogen Incorporation Near Top and Bottom Surfaces of Ultra-Thin Silicon Oxynitrides 185
X-Ray Photoelectron Studies of Oxynitrides for Gate Applications 193
Development of Silicon Nitride Films for Gate Dielectric Applications 207
Diffusion of Iron Contamination in Silicon Dioxide 219
Novel Uses of Silicon Dioxide in Deep-Submicron Device Fabrication 225
On the Silicon Suboxide Layer Above an Atomically Abrupt Silicon Oxide/Si(100) Interface in N[subscript 2]O Furnace Oxidation 240
Organic Contamination on Si Wafers in Fab Environments and its Effects on Gate Oxide Integrity 250
A Study on the Angular Dependence of the Etch and the Redeposition Rates in Plasma Etching Using a Faraday Cage 260
Gate Oxides on Deuterium Implanted Silicon Substrate 270
Authors Index 279
Subject Index 281
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