Silicon-on-Insulator Technology: Materials to VLSI: Materials to VLSI / Edition 3

Hardcover (Print)
Buy New
Buy New from BN.com
$167.20
Used and New from Other Sellers
Used and New from Other Sellers
from $62.82
Usually ships in 1-2 business days
(Save 69%)
Other sellers (Hardcover)
  • All (13) from $62.82   
  • New (10) from $62.82   
  • Used (3) from $63.00   

Overview

Silicon-on-Insulator Technology: Materials to VLSI, 2nd Edition describes the different facets of SOI technology. SOI chips are now commercially available and SOI wafer manufacturers have gone public. SOI has finally made it out of the academic world and is now a big concern for every major semiconductor company. SOI technology has indeed deserved serious recognition: high-temperature (400°C), extremely rad-hard (500 Mrad(Si)), high-density (16 Mb, 0.9-volt DRAM), high-speed (several GHz) and low-voltage (0.5 V) SOI circuits have been demonstrated. Strategic choices in favor of the use of SOI for low-voltage, low-power portable systems have been made by several major semiconductor manufacturers.
Read More Show Less

Editorial Reviews

Booknews
Following an introduction which briefly describes some advantages of SOI technology, such as the absence of latchup in CMOS structures and the reduction of parasitic source and drain capacitances, chapters cover the different approaches for producing SOI materials (and issues of material quality); characterization techniques; the basics of SOI CMOS processing; the physics of the SOI MOSFET; other types of devices fabricated on SOI substrates; the performances of SOI devices operating in a harsh environment (high temperature or radiations); and the performance of modern SOI circuits, such as low-voltage, low-power CMOS, rad-hard, high-temperature, RAM and smart-power circuits. Annotation c. by Book News, Inc., Portland, Or.
Read More Show Less

Product Details

  • ISBN-13: 9781402077739
  • Publisher: Springer US
  • Publication date: 2/29/2004
  • Edition description: 3rd ed. 2004
  • Edition number: 3
  • Pages: 366
  • Product dimensions: 0.94 (w) x 6.14 (h) x 9.21 (d)

Table of Contents

1 Introduction.- 2 SOI Materials.- 2.1 Introduction.- 2.2 Heteroepitaxial techniques.- 2.2.1 Silicon-on-Sapphire (SOS).- 2.2.2 Other heteroepitaxial SOI materials.- 2.2.2.1 Silicon-on-Zirconia (SOZ).- 2.2.2.2 Silicon-on-Spinel.- 2.2.2.3 Silicon on Calcium Fluoride.- 2.3 Dielectric Isolation (DI).- 2.4 Polysilicon melting and recrystallization.- 2.4.1 Laser recrystallization.- 2.4.2 E-beam recrystallization.- 2.4.3 Zone-melting recrystallization.- 2.5 Homoepitaxial techniques.- 2.5.1 Epitaxial lateral overgrowth.- 2.5.2 Lateral solid-phase epitaxy.- 2.6 FIPOS.- 2.7 Ion beam synthesis of a buried insulator.- 2.7.1 Separation by implanted oxygen (SIMOX).- 2.7.1.1 “Standard”SIMOX.- 2.7.1.2 Low-dose SIMOX.- 2.7.1.3 ITOX.- 2.7.1.4 SMOXMLD.- 2.7.1.5 Related techniques.- 2.7.1.6 Material quality.- 2.7.2 Separation by implanted nitrogen (SIMNI).- 2.7.3 Separation by implanted oxygen and nitrogen (SIMON).- 2.7.4 Separation by implanted Carbon.- 2.8 Wafer Bonding and Etch Back (BESOI).- 2.8.1 Hydrophilic wafer bonding.- 2.8.2 Etch back.- 2.9 Layer transfer techniques.- 2.9.1 Smart-Cut®.- 2.9.1.1 Hydrogen / rare gas implantation.- 2.9.1.2 Bonding to a stiffener.- 2.9.1.3 Annealing.- 2.9.1.4 Splitting.- 2.9.1.5 Further developments.- 2.9.2 Eltran®.- 2.9.2.1 Porous silicon formation.- 2.9.2.2 The original Eltran® process.- 2.9.2.3 Second-generation Eltran® process.- 2.9.3 Transferred layer material quality.- 2.10 Strained silicon on insulator (SSOI).- 2.11 Silicon on diamond.- 2.12 Silicon-on-nothing (SON).- 3 SOI Materials Characterization.- 3.1 Introduction.- 3.2 Film thickness measurement.- 3.2.1 Spectroscopic reflectometry.- 3.2.2 Spectroscopic ellipsometry.- 3.2.3 Electrical thickness measurement.- 3.3 Crystal quality.- 3.3.1 Crystal orientation.- 3.3.2 Degree of crystallinity.- 3.3.3 Defects in the silicon film.- 3.3.3.1 Most common defects.- 3.3.3.2 Chemical decoration of defects.- 3.3.3.3 Detection of defects by light scattering.- 3.3.3.4 Other defect assessment techniques.- 3.3.3.5 Stress in the silicon film.- 3.3.4 Defects in the buried oxide.- 3.3.5 Bond quality and bonding energy.- 3.4 Carrier lifetime.- 3.4.1 Surface Photovoltage.- 3.4.2 Photoluminescence.- 3.4.3 Measurements on MOS transistors.- 3.4.3.1 Accumulation-mode transistor.- 3.4.3.2 Inversion-mode transistor.- 3.4.3.3 Bipolar effect.- 3.5 Silicon/Insulator interfaces.- 3.5.1 Capacitance measurements.- 3.5.2 Charge pumping.- 3.5.3—-MOSFET.- 4 SOI CMOS Technology.- 4.1 SOI CMOS processing.- 4.1.1 Fabrication yield and fabrication cost.- 4.2 Field isolation.- 4.2.1 LOCOS.- 4.2.2 Mesa isolation.- 4.2.3 Shallow trench isolation.- 4.2.4 Narrow-channel effects.- 4.3 Channel doping profile.- 4.4 Source and drain engineering.- 4.4.1 Silicide source and drain.- 4.4.2 Elevated source and drain.- 4.4.3 Tungsten clad.- 4.4.4 Schottky source and drain.- 4.5 Gate stack.- 4.5.1 Gate material.- 4.5.2 Gate dielectric.- 4.5.3 Gate etch.- 4.6 SOI MOSFET layout.- 4.6.1 Body contact.- 4.7 SOI-bulk CMOS design comparison.- 4.8 ESD protection.- 5 The SOI MOSFET.- 5.1 Capacitances.- 5.1.1 Source and drain capacitance.- 5.1.2 Gate capacitance.- 5.2 Fully and partially depleted devices.- 5.3 Threshold voltage.- 5.3.1 Body effect.- 5.3.2 Short-channel effects.- 5.4 Current-voltage characteristics.- 5.4.1 Lim & Fossum model.- 5.4.2 C?-continuous model.- 5.5 Transconductance.- 5.5.1 gm/ID ratio.- 5.5.2 Mobility.- 5.6 Basic parameter extraction.- 5.6.1 Threshold voltage and mobility.- 5.6.2 Source and drain resistance.- 5.7 Subthreshold slope.- 5.8 Ultra-thin SOI MOSFETs.- 5.8.1 Threshold voltage.- 5.8.2 Mobility.- 5.9 Impact ionization and high-field effects.- 5.9.1 Kink effect.- 5.9.2 Hot-carrier degradation.- 5.10 Floating-body and parasitic BJT effects.- 5.10.1 Anomalous subthreshold slope.- 5.10.2 Reduced drain breakdown voltage.- 5.10.3 Other floating-body effects.- 5.11 Self heating.- 5.12 Accumulation-mode MOSFET.- 5.12.1 I-V characteristics.- 5.12.2 Subthreshold slope.- 5.13 Unified body-effect representation.- 5.14 RF MOSFETs.- 5.15 CAD models for SOI MOSFETs.- 6 Other SOI Devices.- 6.1 Multiple-gate SOI MOSFETs.- 6.1.1 Multiple-gate SOI MOSFET structures.- 6.1.1.1 Double-gate SOI MOSFETs.- 6.1.1.2 Triple-gate SOI MOSFETs.- 6.1.1.3 Surrounding-gate SOI MOSFETs.- 6.1.1.4 Triple-plus gate SOI MOSFETs..- 6.1.2 Device characteristics.- 6.1.2.1 Current drive.- 6.1.2.2 Short-channel effects.- 6.1.2.3 Threshold voltage.- 6.1.2.4 Volume inversion.- 6.1.2.5 Mobility.- 6.2 MTCMOS/DTMOS.- 6.3 High-voltage devices.- 6.3.1 VDMOS and LDMOS.- 6.3.2 Other high-voltage devices.- 6.4 Junction Field-Effect Transistor.- 6.5 Lubistor.- 6.6 Bipolar junction transistors.- 6.7 Photodiodes.- 6.8 G4 FET.- 6.9 Quantum-effect devices.- 7 The SOI MOSFET in a Harsh Environment.- 7.1 Ionizing radiations.- 7.1.1 Single-event phenomena.- 7.1.2 Total dose effects.- 7.1.3 Dose-rate effects.- 7.2 High-temperature operation.- 7.2.1 Leakage current.- 7.2.2 Threshold voltage.- 7.2.3 Output conductance.- 7.2.4 Subthreshold slope.- 8 SOI Circuits.- 8.1 Introduction.- 8.2 Mainstream CMOS applications.- 8.2.1 Digital circuits.- 8.2.2 Low-voltage, low-power digital circuits.- 8.2.3 Memory circuits.- 8.2.3.1 Non volatile memory devices.- 8.2.3.2 Capacitorless DRAM.- 8.2.4 Analog circuits.- 8.2.5 Mixed-mode circuits.- 8.3 Niche applications.- 8.3.1 High-temperature circuits.- 8.3.2 Radiation-hardened circuits.- 8.3.3 Smart-power circuits.- 8.4 Three-dimensional integration.

Read More Show Less

Customer Reviews

Be the first to write a review
( 0 )
Rating Distribution

5 Star

(0)

4 Star

(0)

3 Star

(0)

2 Star

(0)

1 Star

(0)

Your Rating:

Your Name: Create a Pen Name or

Barnes & Noble.com Review Rules

Our reader reviews allow you to share your comments on titles you liked, or didn't, with others. By submitting an online review, you are representing to Barnes & Noble.com that all information contained in your review is original and accurate in all respects, and that the submission of such content by you and the posting of such content by Barnes & Noble.com does not and will not violate the rights of any third party. Please follow the rules below to help ensure that your review can be posted.

Reviews by Our Customers Under the Age of 13

We highly value and respect everyone's opinion concerning the titles we offer. However, we cannot allow persons under the age of 13 to have accounts at BN.com or to post customer reviews. Please see our Terms of Use for more details.

What to exclude from your review:

Please do not write about reviews, commentary, or information posted on the product page. If you see any errors in the information on the product page, please send us an email.

Reviews should not contain any of the following:

  • - HTML tags, profanity, obscenities, vulgarities, or comments that defame anyone
  • - Time-sensitive information such as tour dates, signings, lectures, etc.
  • - Single-word reviews. Other people will read your review to discover why you liked or didn't like the title. Be descriptive.
  • - Comments focusing on the author or that may ruin the ending for others
  • - Phone numbers, addresses, URLs
  • - Pricing and availability information or alternative ordering information
  • - Advertisements or commercial solicitation

Reminder:

  • - By submitting a review, you grant to Barnes & Noble.com and its sublicensees the royalty-free, perpetual, irrevocable right and license to use the review in accordance with the Barnes & Noble.com Terms of Use.
  • - Barnes & Noble.com reserves the right not to post any review -- particularly those that do not follow the terms and conditions of these Rules. Barnes & Noble.com also reserves the right to remove any review at any time without notice.
  • - See Terms of Use for other conditions and disclaimers.
Search for Products You'd Like to Recommend

Recommend other products that relate to your review. Just search for them below and share!

Create a Pen Name

Your Pen Name is your unique identity on BN.com. It will appear on the reviews you write and other website activities. Your Pen Name cannot be edited, changed or deleted once submitted.

 
Your Pen Name can be any combination of alphanumeric characters (plus - and _), and must be at least two characters long.

Continue Anonymously

    If you find inappropriate content, please report it to Barnes & Noble
    Why is this product inappropriate?
    Comments (optional)