Strained Silicon Heterostructures: Materials and devices

by C.K. Maiti (Editor), N.B. Chakrabarti (Editor), S.K. Ray (Editor)

Overview

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Product Details

ISBN-13:	9780852967782
Publisher:	The Institution of Engineering and Technology
Publication date:	11/23/2001
Series:	Materials, Circuits and Devices , #12
Pages:	508
Product dimensions:	6.14(w) x 9.21(h) x (d)

About the Author

Dr Maiti received his M Tech degree in Radio Physics and Electronics from the Universityof Calcutta and MSc from the Universityof Technology, Loughborough. His PhD was awarded by the Indian Institute of Technology, Kharagpur in 1984 where he remained and currently is a Professor in the Department of Electronics. He currently leads the semiconductor device/process simulation research group.

Dr Chakrabarti received his MSc(Tech) degree in Applied Physics and DSc from the Universityof Calcutta in 1974. He is now associated with the VLSI laboratory of the Indian Institute of Technology, Kharagpur after retiring as a Professor in the Department of Electronics.

Dr Ray received his MSc degree from the Universityof Calcutta and his M Tech and PhD from the Indian Institute of Technology, Kharagpur in 1991. He is now an Associate Professor in the Physics department leading the semiconductor materials processing research group.

Table of Contents

• Chapter 1: Introduction
• Chapter 2: Strained Layer Epitaxy
• Chapter 3: Electronic Properties of Alloy Layers
• Chapter 4: Gate Dielectrics on Strained Layers
• Chapter 5: SiGe Heterojunction Bipolar Transistors
• Chapter 6: Heterostructure Field Effect Transistors
• Chapter 7: BICFET, RTD and Other Devices
• Chapter 8: MODFETs
• Chapter 9: Contact Metallization on Strained Layers
• Chapter 10: Si/SiGe Optoelectronics