Subthreshold Surface Potential Model for Short-Channel Mosfet

Subthreshold Surface Potential Model for Short-Channel Mosfet

by Sarkar Angsuman
     
 

As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In…  See more details below

Overview

As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.

Product Details

ISBN-13:
9783659126093
Publisher:
AV Akademikerverlag GmbH & Co. KG.
Publication date:
02/27/2014
Pages:
84
Product dimensions:
6.00(w) x 9.00(h) x 0.20(d)

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