Systematic Analysis Of Bipolar And Mos Transistors

by Ugur Cilingiroglu

Overview

Systematic Analysis of Bipolar and MOS Transistors is a self-contained reference that walks you through the logical processes involved in transistor analysis. Linking device and circuit engineering, it shows you how to use device models intelligently, tailor existing models, and develop new ones.

Product Details

ISBN-13:	9780890066256
Publisher:	Artech House, Incorporated
Publication date:	12/01/1993
Series:	Artech House Materials Science Library Series
Pages:	248
Product dimensions:	6.00(w) x 9.00(h) x 0.69(d)

Table of Contents

	Preface	ix
Chapter 1	Background	1
1.1	Fundamental Concepts and Equations	1
1.1.1	Constituents of a Semiconductor Crystal	1
1.1.2	Poisson's Equation	4
1.1.3	Current Density Equations	6
1.1.4	Continuity Equations	12
1.1.5	More on Energy-Band Diagrams	18
1.2	Thermal Equilibrium	21
1.2.1	General Equilibrium Properties of Semiconductors	22
1.2.2	Analysis in Equilibrium	28
1.3	Nonequilibrium	34
1.3.1	Injection Level	34
1.3.2	The Shockley-Read-Hall Theory of Trapping	35
1.3.3	Analysis of a Bulk Region in Low-Level Injection	38
1.3.4	Extending the Fermi Formalism to Nonequilibrium	47
	Problems	48
	References	59
Chapter 2	Bipolar Junction Transistors	61
2.1	BJTs in Thermal Equilibrium	61
2.2	BJTs Under Bias	65
2.2.1	Fundamentals of the Nonequilibrium Analysis	66
2.2.2	Bulk Current Components	69
2.2.3	Transition Region Current Components	72
2.2.4	The Characteristic Equations of a BJT	74
2.2.5	Forward Active Operation	76
2.2.6	Modeling for Nonuniform Doping Profiles	81
2.2.7	The Early Effect	85
2.3	High-Bias Effects	89
2.3.1	Base Resistance and Emitter Current Crowding	89
2.3.2	High-Level Injection Effects	95
2.3.3	Impact Ionization, Avalanche Multiplication, and Junction Breakdown	112
2.4	BJT Dynamics	116
2.4.1	The Quasistatic BJT Behavior	119
2.4.2	BJT Equivalent Circuits	125
	Problems	130
	References	143
Chapter 3	Metal-Oxide-Semiconductor Transistors	145
3.1	Basic MOSFET Structure	145
3.2	MOSFET Under Bias	146
3.2.1	Fundamentals of Nonequilibrium Analysis	146
3.2.2	Analysis of the Surface Space-Charge Region	150
3.2.3	A General Strong Inversion Model	165
3.2.4	Simplified Strong Inversion Models	172
3.2.5	A Subthreshold Model	174
3.2.6	p-Channel MOSFET	177
3.3	Fundamentals of Structural Optimization	182
3.3.1	Design Constraints	182
3.3.2	Threshold Adjustment	188
3.4	Secondary Effects	193
3.4.1	Velocity Saturation	193
3.4.2	Channel-Length Modulation	194
3.4.3	Punch-Through	196
3.4.4	Short-Channel and Narrow-Channel Effects	202
3.4.5	Impact Ionization and Avalanche Breakdown	206
3.5	MOSFET Dynamics	208
	Problems	217
	References	228