ISBN-10:
0471202401
ISBN-13:
9780471202400
Pub. Date:
07/28/2002
Publisher:
Wiley
Complete Guide to Semiconductor Devices / Edition 2

Complete Guide to Semiconductor Devices / Edition 2

by Kwok K. Ng

Hardcover

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Overview

Complete Guide to Semiconductor Devices / Edition 2

A definitive and up-to-date handbook of semiconductor devices

Semiconductor devices, the basic components of integratedcircuits, are responsible for the rapid growth of the electronicsindustry over the past fifty years. Because there is a growing needfor faster and more complex systems for the information age,existing semiconductor devices are constantly being studied forimprovement, and new ones are being continually invented. As aresult, a large number of types and variations of devices areavailable in the literature. The Second Edition of thisunique engineering guide continues to be the only availablecomplete collection of semiconductor devices, identifying 74 majordevices and more than 200 variations of these devices.

As in the First Edition, the value of this text lies inits comprehensive, yet highly readable presentation and itseasy-to-use format, making it suitable for a wide range ofaudiences.

  • Essential information is presented for a quick, balancedoverview
  • Each chapter is designed to cover only one specific device, foreasy and focused reference
  • Each device is discussed in detail, always including itshistory, its structure, its characteristics, and itsapplications
The Second Edition has been significantly updated with eightnew chapters, and the material rearranged to reflect recentdevelopments in the field. As such, it remains an ideal referencesource for graduate students who want a quick survey of the field,as well as for practitioners and researchers who need quick accessto basic information, and a valuable pragmatic handbook forsalespeople, lawyers, and anyone associated with the semiconductorindustry.

Product Details

ISBN-13: 9780471202400
Publisher: Wiley
Publication date: 07/28/2002
Series: Wiley - IEEE Series
Edition description: REV
Pages: 768
Product dimensions: 6.50(w) x 9.50(h) x 1.60(d)

About the Author

KWOK K. NG received his PhD from Columbia University in 1979 andhis BS degree from Rutgers University in 1975, both in electricalengineering. Since 1980, he has been a Technical Manager with AgereSystems (formerly Bell Laboratories of AT&T and then of LucentTechnologies) at the Murray Hill location in New Jersey. Hisactivities include Si MOS devices, SiGe heterojunction bipolartransistors, and recently compound-semiconductor high-speed andhigh-power devices. Dr. Ng has held positions as editor of IEEEElectron Device Letters and as liaison to IEEE Press.

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Table of Contents

Preface.

Preface to the First Edition.

Introduction.

DIODES I: RECTIFIERS.

p-n Junction Diode.

p-i-n Diode.

Schottky-Barrier Diode.

Planar-Doped-Barrier (PDB) Diode.

Isotype Heterojunction.

DIODES II: NEGATIVE RESISTANCE N-SHAPED.

Tunnel Diode.

Transferred-Electron Device (TED).

Resonant-Tunneling Diode.

Resonant-Interband-Tunneling (RIT) Diode.

Single-Barrier Tunnel Diode.

Single-Barrier Tunnel Diode.

Single-Barrier Interband-Tunneling Diode.

Real-Space-Transfer (RST) Diode.

DIODES III: NEGATIVE RESISTANCE S-SHAPED.

Metal-Insulator-Semiconductor Switch (MISS).

Planar-Doped-Barrier (PDB) Switch.

Amorphous Threshold Switch.

Heterostructure Hot-Electron Diode (HHED).

DIODES IV: NEGATIVE RESISTANCE TRANSIT-TIME.

Impact-Ionization-Avalanche Transit-Time (IMPATT) Diode.

Barrier-Injection Transit-Time (BARITT) Diode.

RESISTIVE AND CAPACITIVE DEVICES.

Resistor.

Metal-Oxide-Semiconductor (MOS) Capacitor.

Charge-Coupled Device (CCD).

TRANSISTORS I: FIELD-EFFECT.

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET).

Junction Field-Effect Transistor (JFET).

Metal-Semiconductor Field-Effect Transistor (MESFET).

Modulation-Doped Field-Effect Transistor (MODFET).

Permeable-Base Transistor.

Static-Induction Transistor (SIT).

Real-Space-Transfer (RST) Transistor.

Planar-Doped Field-Effect Transistor.

Surface-Tunnel Transistor.

Lateral Resonant-Tunneling Field-Effect Transistor (LRTFET).

Stark-Effect Transistor.

Velocity-Modulation Transistor (VMT).

TRANSISTOR II: POTENTIAL-EFFECT.

Bipolar Transistor.

Tunneling Hot-Electron-Transfer Amplifier (THETA).

Metal-Base Transistor.

Bipolar Inversion-Channel Field-Effect Transistor (BICFET).

Tunnel-Emitter Transistor (TETRAN).

Planar-Doped-Barrier (PDB) Transistor.

Heterojunction Hot-Electron Transistor (HHET).

Induced-Base Transistor.

Resonant-Tunneling Bipolar Transistor (RTBT/RBT).

Resonant-Tunneling Hot-Electron Transistor (RHET).

Quantum-Well-Base Resonant-Tunneling Transistor (QWBRTT).

Spin-Valve Transistor.

NONVOLATILE MEMORIES.

Floating-Gate Avalanche-Injection Metal-Oxide-Semiconductor (FAMOS)Transistor.

Metal-Nitride-Oxide-Semiconductor (MNOS) Transistor.

THYRISTORS AND POWER DEVICES.

Silicon-Controlled Rectifier (SCR).

Insulated-Gate Bipolar Transistor (IGBT).

Static-Induction Thyristor (SIThy).

Unijunction Transistor.

PHOTONICS I: LIGHT SOURCES.

Light-Emitting Diode (LED).

Injection Laser.

PHOTONICS II: PHOTODETECTORS.

Photoconductor.

p-i-n Photodiode.

Schottky-Barrier Photodiode.

Charge-Coupled Image Sensor (CCIS).

Avalanche Photodiode (APD).

Phototransistor.

Metal-Smiconductor-Metal (MSM) Photodetector.

Quantum-Well Infrared Photodetector (QWIP).

Quantum-Dot Infrared Photodetector (QDIP).

Blocked-Impurity-Band (BIB) Photodetector.

Negative-Electron-Affinity (NEA) Photocathode.

Photon-Drag Detector.

PHOTONICS III: BISTABLE OPTICAL DEVICES.

Self-Electrooptic-Effect Device (SEED).

Bistable Etalon.

PHOTONICS IV: OTHER DEVICES.

Solar Cell.

Electroabsorption Modulator.

Thermistor.

Hall Plate.

Strain Gauge (Gage).

Interdigital Transducer (IDT).

Ion-Sensitive Field-Effect Transistor (ISFET).

Appendix A: Selected Nonsemiconductor Devices.

Appendix B: Physical Phenomena.

Appendix C: General Applications of Device Groups.

Appendix D: Physical Properties.

Appendix E: Background Information.

Index.

What People are Saying About This

From the Publisher

"...I feel that I'm performing a public service for readers byrecommending 'The Complete Guide to Semiconductor Devices (SecondEdition), by Dr. K.K. Ng.
Dr. Ng earned his Ph.D in electrical engineering from ColumbiaUniversity. Since 1980, he's been a technical manager with AgereSystems (formerly Bell Labs), in Murray Hill, N.J. (The book ispublished by Wiley Interscience [wiley.com], and is availablewherever books of this ilk are sold).
The author is no slouch when it comes to technical publishingeither. He's been editor of IEEE Electron Device Letters and is aliaison ot the IEEE Press, so it's a pretty good bet he knows whathe's talking about.
Now, I don't know Dr. Ng personally, nor do I get any money formentioning this book or any other. (I did get the book free toreview, though!)
I suspect that Dr. Ng covers just about anything you'd care to knowabout semiconductors within its 700+ pages. This new edition, whichfollows the first by eight years, is a testament to the enduranceof the earlier work." —Ron Iscoff, Editor, Chip Scale ReviewOnline

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