Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization

Effect of Disorder and Defects in Ion-Implanted Semiconductors: Electrical and Physiochemical Characterization

Hardcover

$260.00

Product Details

ISBN-13: 9780127521459
Publisher: Elsevier Science
Publication date: 04/22/1997
Series: Semiconductors and Semimetals Series
Pages: 300
Product dimensions: 5.98(w) x 9.02(h) x (d)

About the Author

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

Table of Contents

Introduction. H. Ryssel, Ion Implantation into Semiconductors: Historical Perspectives. Implantation and Annealing Processes: Y.-N. Wang and T.-C. Ma, Energetic Stopping Power for Energetic Ions in Solid. S.T. Nakagawa, Solid Effect on the Electronic Stopping and Application to Range Estimation. G. Nuler, S. Kalbitzer, and G.N. Greaves, Ion Implantation into Amorphous Semiconductors. Electrical Characterization: J. Boussey-Said, Sheet and Spreading Resistance Analysis of Ion Implanted and Annealed Semiconductors. M.L. Polignano and G. Queirolo, Stripping Hall Affect Studies. Physico-Chemical Studies: J. Stoemenos, Transmission Electron Microscopy Analysis. M. Servidori and R. Nipoti, Rutherford Back Scattering Studies of Ion Implanted Semiconductors. P. Zaumseil, X-Ray Diffraction Techniques. Subject Index.

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