High Speed Heterostructure Devices

by Albert C. Beer (Editor), Eicke R. Weber (Editor), R. K. Willardson (Editor), Richard A. Kiehl (Editor), T. C.L. Gerhard Sollner (Editor)

Overview

Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices

Product Details

ISBN-13:	9780080864389
Publisher:	Elsevier Science & Technology Books
Publication date:	07/06/1994
Series:	Semiconductors and Semimetals , #41
Sold by:	Barnes & Noble
Format:	eBook
Pages:	454
File size:	16 MB
Note:	This product may take a few minutes to download.

About the Author

Prof. Dr. Eicke R. Weber, Fraunhofer-Institut für Solare Energiesysteme ISE, Freiburg, Germany

Table of Contents

F. Capasso, F. Beltram, S. Sen, A. Palevski, and Y.A. Cho, Quantum Electron Devices: Physics and Applications. P. Solomon, D.J. Frank, S.L. Wright, and F. Canora, GaAs-Gate Semiconductor-Insulator-Semiconductor FET.M.M. Hashemi and U.K. Mishra, Unipolar InP-Based Transistors. R.A. Kiehl, Complementary Heterostructure FET Integrated Circuits. T. Ishibashi, GaAs-Based and InP-Based Heterostructure Bipolar Transistors. H.C. Liu and T.C.L.G. Sollner, High Frequency Resonant-Tunneling Devices. H. Ohnishi, T. Mori, M. Takatsu, K. Imamura, and N. Yokoyama, Resonant-Tunneling Hot-Electron Transistors and Circuits. References. Index.