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Insulating Films on Semiconductors 1991 covers the fundamental aspects of the properties of dielectrics/semiconductor structures, the study of high field/hot electron/radiation induced phenomena, and the developments in measurement techniques for looking at interfaces and surfaces on semiconductor materials. The volume is written for researchers in physics, materials science, electronics, and electrical engineering.
|Publisher:||Taylor & Francis|
|Product dimensions:||8.50(w) x 11.00(h) x 0.90(d)|
Table of ContentsPreface. Invited papers: Discrete conductance fluctuations and related phenomena in metal-oxide-silicon device structures (K R Farmer). Oxidation of silicon (A M Stoneham). UV and plasma effects in the Si/Si0^O 2 system (J Kassabov). Hot-electron transport studies in Si0^O 2 using soft-x-ray induced internal photoemission (E Cartier and F R McFeely). Interface and oxide engineering for high quality SIMOX devices (S Cristoloveanu). Workshop papers: The relationship of trapping and trap creation in silicon dioxide films to hot carrier degradation of Si MOSFETs (D J DiMaria). Charge trapping and degradation of thin dielectric layers (M M Heyns and A V Schwerin). Hot carrier-induced degradation modes in thin-gate insulator dual-gate MOSFETs (H Iwai). The impact of hot carrier degradation on scaling of sub-m CMOS processes (H M Muhlhoff, M Steimlz and J Dietl). SOI CMOS devices (M Haond and O Le Neel). Poly-Si thin film transistors (S D Brotherton). Contributed papers: Fundamental electronic processes and measurements (7 papers). Growth and properties of grown oxides of silicon (8 papers). Properties of deposited dielectrics (7 papers). Defects and impurities in SiO2 (4 papers). Poly and amorphous structures (3 papers). Hot carrier phenomena (6 papers). Degradation and trapping in SiO2 (10 papers). Silicon on insulator (9 papers). Author index.