Pub. Date:
Springer US
Ion Implantation: Basics to Device Fabrication / Edition 1

Ion Implantation: Basics to Device Fabrication / Edition 1

by Emanuele Rimini


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Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work.
This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.

Product Details

ISBN-13: 9780792395201
Publisher: Springer US
Publication date: 12/31/1994
Series: The Springer International Series in Engineering and Computer Science , #293
Edition description: 1995
Pages: 393
Product dimensions: 6.10(w) x 9.25(h) x 0.24(d)

Table of Contents

Preface. List of Tables. 1. Semiconductor Devices. 2. Ion Implanters. 3. Range Distribution. 4. Radiation Damage. 5. Annealing and Secondary Defects. 6. Analytical Techniques. 7. Silicon Based Devices. 8. Ion Implantation in Compound Semiconductor and Buried Layer Synthesis. Selected References. References. Index.

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