Microscopy of Semiconducting Materials 1989 brings together both the invited and contributed papers from this conference. The main subject areas covered include: high resolution microscopy, microanalysis, epitaxial layers, quantum wells and superlattices, bulk GaAs, X-ray studies, dielectric structures, silicides and metal-semiconductor contacts, device studies and advanced scanning microscopy techniques. This volume provides an indispensable guide for researchers in physics, materials science, electronics and electrical engineering.
Table of ContentsHigh resolution microscopy (9 papers). Microanalysis (5 papers). Epitaxial layers (24 papers). Quantum wells and superlattices (13 papers). Bulk gallium arsenide and other compounds (14 papers). X-ray studies (5 papers). Device silicon and dielectric structures (15 papers). Silicides and metal-semiconductor contacts (13 papers). Electron beam testing and device studies (4 papers). Advanced scanning microscopy techniques (16 papers). Author index. Subject index.