ISBN-10:
1420059114
ISBN-13:
9781420059113
Pub. Date:
02/04/2009
Publisher:
Taylor & Francis
Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices / Edition 1

Nanoparticle Engineering for Chemical-Mechanical Planarization: Fabrication of Next-Generation Nanodevices / Edition 1

by Ungyu Paik, Jea-Gun Park
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Overview

In the development of next-generation nanoscale devices, higher speed and lower power operation is the name of the game. Increasing reliance on mobile computers, mobile phone, and other electronic devices demands a greater degree of speed and power. As chemical mechanical planarization (CMP) progressively becomes perceived less as black art and more as a cutting-edge technology, it is emerging as the technology for achieving higher performance devices.

Nanoparticle Engineering for Chemical-Mechanical Planarization explains the physicochemical properties of nanoparticles according to each step in the CMP process, including dielectric CMP, shallow trend isolation CMP, metal CMP, poly isolation CMP, and noble metal CMP. The authors provide a detailed guide to nanoparticle engineering of novel CMP slurry for next-generation nanoscale devices below the 60nm design rule. They present design techniques using polymeric additives to improve CMP performance. The final chapter focuses on novel CMP slurry for the application to memory devices beyond 50nm technology.

Most books published on CMP focus on the polishing process, equipment, and cleaning. Even though some of these books may touch on CMP slurries, the methods they cover are confined to conventional slurries and none cover them with the detail required for the development of next-generation devices. With its coverage of fundamental concepts and novel technologies, this book delivers expert insight into CMP for all current and next-generation systems.

Product Details

ISBN-13: 9781420059113
Publisher: Taylor & Francis
Publication date: 02/04/2009
Edition description: New Edition
Pages: 221
Product dimensions: 6.12(w) x 9.25(h) x 0.80(d)

About the Author

Hanyang University, Seoul, South Korea

Table of Contents

Overview of CMP Technology




Motivation and Background




The
Key Factors of CMP Process







Interlayer
Dielectric CMP




Interlayer
Dielectric (ILD) CMP Process




Rheological and Electrokinetic Behavior of Nano Fumed Silica Particle for ILD CMP




Particle
Engineering for Improvement of CMP Performance




PAD
Dependency in ILD CMP




ILD
Pattern Dependencies







Shallow
Trench Isolation CMP




Requirement for High Selectivity Slurry




Particle
Engineering of Ceria Nanoparticles and Their Influence on CMP Performance




Chemical
Engineering for High Selectivity in STI CMP




Force
Measurement Using Atomic Force Microscopy for




Mechanism




Pattern
Dependence of High-Selectivity Slurry







Copper
CMP




Introduction




High
Selectivity for Copper CMP




Copper
CMP Pattern Dependence







Nanotopography




What
Is Nanotopography?




Why
Nanotopography Is Important




Impact of Nanotopography on CMP




Equipment in Measuring the Nanotopography







Novel
CMP for Next-Generation Devices




The
Progress of Semiconductor Devices upon Current Demand




Complementary
Metal-Oxide Semiconductor (CMOS) Memory




Novel
CMP for New Memory







References




Index


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