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Nitride Semiconductor Devices: Principles and Simulation / Edition 1

Nitride Semiconductor Devices: Principles and Simulation / Edition 1

by Joachim Piprek


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Product Details

ISBN-13: 9783527406678
Publisher: Wiley
Publication date: 03/23/2007
Pages: 519
Product dimensions: 6.97(w) x 9.69(h) x 1.31(d)

About the Author

Joachim Piprek received his doctorate in physics from Humboldt University Berlin, Germany. He has taught graduate courses at universities in Germany, Sweden, and in the United States. Most recently, he was a professor at the University of California at Santa Barbara, where he collaborated for several years with Shuji Nakamura on nitride device simulation and analysis. Joachim Piprek is currently the director of the NUSOD Institute ( He has previously published two books and authored more than 100 journal and conference publications in this field.

Table of Contents

1. Introduction
2. Electron Bandstructure Parameters
3. Spontaneous and Piezoelectric Polarization: Basic Theory vs. Practical Recipes
4. Transport Parameters for Electrons and Holes
5. Optical Constants of Bulk Nitrides
6. Intersubband Absorption in AlGaN/GaN Quantum Wells
7. Interband Transitions in InGaN Quantum Wells
8. Electronic and Optical Properties of GaN-based Quantum Wells with (10-10) Crystal Orientation
9. Carrier Scattering in Quantum-Dot Systems

10. AlGaN/GaN High Electron Mobility Transistors
11. Intersubband Optical Switches for Optical Communications
12. Intersubband Electroabsorption Modulator
13. Ultraviolet Light-Emitting Diodes
14. Visible Light-Emitting Diodes
15. Simulation of LEDs with Phosphorescent Media for the Generation of White Light
16. Fundamental Characteristics of Edge-Emitting Lasers
17. Resonant Internal Transverse-Mode Coupling in InGaN/GaN/AlGaN Lasers
18. Optical Properties of Edge-Emitting Lasers: Measurement and Simulation
19. Electronic Properties of InGaN/GaN Vertical-Cavity Lasers
20. Optical Design of Vertical-Cavity Lasers
21. GaN Nanowire Lasers

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